Allicdata Part #: | FJAF4310OTU-ND |
Manufacturer Part#: |
FJAF4310OTU |
Price: | $ 1.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 140V 10A TO-3PF |
More Detail: | Bipolar (BJT) Transistor NPN 140V 10A 30MHz 80W Th... |
DataSheet: | FJAF4310OTU Datasheet/PDF |
Quantity: | 274 |
1 +: | $ 1.32930 |
10 +: | $ 1.19574 |
100 +: | $ 0.96094 |
500 +: | $ 0.78950 |
1000 +: | $ 0.65416 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 3A, 4V |
Power - Max: | 80W |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF |
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The FJAF4310OTU is a high-performance and cost-effective single bipolar junction transistor (BJT). Its high gain, low capacitance, and reliable performance make it ideal for a variety of applications in a wide range of industries, including automotive, medical, and consumer electronics. This article will explore the working principle of this transistor and discuss its application fields.
Working Principle
A bipolar junction transistor (BJT) is an active semiconductor device that consists of two distinct regions. The first, known as the base region, is typically very thin in comparison to the collector and emitter regions. The BJT consists of either an n-type material for an n-p-n transistor or p-type material for a p-n-p transistor. A dc bias is applied on the base-emitter junction in order to control the device current, while the dc-bias in the collector-base junction determines the device gains. By extending the amount of bias and current, the transistor amplifies the input signal. The better the gain, the more efficient and powerful the amplifier can be.
The FJAF4310OTU is an n-p-n bipolar junction transistor with a low input capacitance. It has a high hFE rating, making it an ideal choice for high gain applications. The FJAF4310OTU works in forward active region and has an maximum operating frequency of 160 MHz. It is suitable for use in small signal and medium power amplification applications, such as Class A amplifiers and RF driver stages. The device also has a low saturation voltage, making it suitable for use in high speed electronics.
Application Fields
The FJAF4310OTU is ideal for use in a wide range of applications, such as RF amplifiers, switching circuits, Class A amplifiers, power amplifiers, and saturation modes. In RF applications, the FJAF4310OTU can be used for low noise amplifier (LNA) stages, receiver stages, and medium power driver stages. The low saturation voltage of the FJAF4310OTU makes it suitable for use in high speed electronics. The device can also be used in low to medium power switching circuits, such as high-speed logic circuit switching.
The FJAF4310OTU is also suitable for use in medical electronics, such as thermometers, medical instrumentation, medical imaging, patient monitors, and X-ray imaging. The device has low noise characteristics and high gain values, making it ideal for use in medical devices that require low power consumption and high performance. The device is also suitable for a wide range of automotive electronics, such as automotive audio systems, engine control systems, and automatic transmission systems.
The FJAF4310OTU can also be used in consumer electronics applications, such as television receivers, audio amplifiers, audio processors, and portable audio players. It is also suitable for use in computers and computer peripherals, such as keyboards, joysticks, and monitors. The device is also ideal for a wide range of industrial applications, such as pressure sensors, thermocouples, and robotics control.
Conclusion
The FJAF4310OTU is a high-performance and cost-effective single bipolar junction transistor (BJT) with high gain, low capacitance, and reliable performance. Its low saturation voltage and high operating frequency make it suitable for use in high speed electronics, medical electronics, automotive electronics, consumer electronics, and industrial applications. The device provides an excellent performance-to-cost ratio and is ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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