FJAF6820TU Allicdata Electronics
Allicdata Part #:

FJAF6820TU-ND

Manufacturer Part#:

FJAF6820TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 750V 20A TO-3PF
More Detail: Bipolar (BJT) Transistor NPN 750V 20A 60W Through...
DataSheet: FJAF6820TU datasheetFJAF6820TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 750V
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Power - Max: 60W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-94
Supplier Device Package: TO-3PF
Description

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The FJAF6820TU is a single bipolar transistor that operates with a junction temperature of -55 to +150 degrees Celcius and is specifically optimized for low voltage applications. The device is specifically designed to provide high speed switching between two or more input signals in applications such as radio frequency and digital logic.

In terms of its design, the FJAF6820TU is a PNP device, capable of operating at a great amount of power. It maintains its ability to handle voltage in the range of -1.7V to -50V and its power capacitance is at least 87pF. The transistor also includes a high current gain of up to 500.

The FJAF6820TU is a Single Bipolar Junction Transistor (BJT), a three-terminal device with two PN junctions. BJTs are the most widely used among all the transistor types due to their capability to handle high currents and power levels, as well as their versatility in the type of circuits they can be used in. The junction between the collector and base, known as the base-collector junction, has a reverse current due to the avalanche of holes and electrons which is also known as the Base-Emitter junction.

The FJAF6820TU application field lies mainly in radio frequency and digital logic circuits. In radio frequency applications, the transistor is used to amplify or switch signals between different frequencies. One of the main applications of the device is RF power amplifiers where the FJAF6820TU helps to increase the power across the radio frequency bandwidth. This is essential for satellite communication, mobile communication, and two-way radio applications.

In digital logic, the transistor is used to switch a signal from one logic level to another. This is more often done in the form of logic gates. Logic gates are used to determine if a signal is active or inactive. This can be useful in circuit design and computer programming, as well as other applications. The FJAF6820TU can also be used in timing and synchronization applications as it has a very low frequency transition time.

The working principle of a BJT is based on it\'s three terminals: the collector, base, and emitter. A small current applied to the base-emitter junction of the transistor causes a much larger current to flow between the collector-emitter, effectively controlling the flow of current through the collector-emitter path. This allows the voltage applied to the base-emitter junction to control the current flowing out from the collector terminal, thus allowing the transistor to act as an amplifier or switch.

The FJAF6820TU is a versatile single bipolar transistor that is optimized for use in low voltage applications. It has a wide range of applications in RF and electronics, most specifically in digital logic and power switching. It is an important device for any application that requires a high current gain and low transition time.

The specific data is subject to PDF, and the above content is for reference

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