FK3303010L Allicdata Electronics

FK3303010L Discrete Semiconductor Products

Allicdata Part #:

FK3303010LTR-ND

Manufacturer Part#:

FK3303010L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 30V 100MA SSSMINI3
More Detail: N-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount ...
DataSheet: FK3303010L datasheetFK3303010L Datasheet/PDF
Quantity: 70000
Stock 70000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 100mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Vgs (Max): ±12V
Series: --
Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FK3303010L is an enhancement-mode, N-channel MOSFET transistor, designed for applications such as load switching, signal switching, and voltage level shifting. It is often used in the design of power circuits and has the advantages of high current capacity, low on-resistance, and very low gate input voltage.

The FK3303010L is a voltage-controlled device, meaning its output current is driven by a gate-voltage signal. Its mechanism of operation is as follows: Applying a voltage signal to the gate turns on the transistor by attracting the normally-negative gate channel to a positive potential. This gate attraction allows electron carriers (holes and electrons) to flow from the source to the drain and thus conduct current.

The FK3303010L transistor is an improved version of the traditional MOSFETS transistors and can offer higher current capacity, lower power dissipation, and wider operating temperature range. It is also relatively immune from crosstalk, noise and electro-static discharge, making it a great choice for signal and power applications. Furthermore, it has a low input capacitance, making it suitable for high-speed switching.

The power MOSFET family has applications in a range of output power stages, switching power converters, and load current monitors. They are commonly used in high-efficiency switching power supplies and are often the choice for many of today\'s ultra-low-power products. They offer superior high frequency performance, making them ideal for frequency inverters, lighting control, and networking applications. In addition, they are used in automotive applications such as in-vehicle power management, engine sensors, and high-speed switching.

This FK3303010L MOSFET can be used for high level of power generation, such as for a switching power converter application. The power converter typically has two discrete signals that control the mode of operation, such as Voltage Mode and Current Mode. The Voltage Mode typically uses a resistive divider in order to sense the output voltage, whereas the Current Mode typically uses a shunt resistor to measure the output current. In both cases, the FK3303010L transistor operates as a switch to regulate the output voltage or current.

Likewise, it is also used to switch and control voltage levels in logic in leveling circuits and logical gates. Specifically, it is used to step up or step down supply voltage levels, or to level shift signals between two different logic families, like TTL and CMOS. It is also used to connect control signals between two isolated components, such as a microcontroller and a motor driver. This is done by means of an opto-coupler.

In short, the FK3303010L MOSFET is an enhancement-mode, N-channel transistor, suited for switching and voltage level control applications. Its high current capacity and very low gate input voltage make it an excellent choice in many power and signal applications. It is also an important component used in voltage and current mode power converter applications, as well as in logic level shifting circuits.

The specific data is subject to PDF, and the above content is for reference

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