FK3503010L Discrete Semiconductor Products

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FK3503010L is a high-speed, high-voltage FET transistor that has been designed and manufactured for use in a variety of applications. This transistor provides excellent performance in a wide range of applications, including RF and power management, voltage regulating, high-frequency switching, and more. It has a maximum breakdown voltage of 500V, with a drain-source on-resistance of 180 mΩ at 4V gate. Additionally, FK3503010L has high switching speed of 10V/nsec and low input capacitance of 13pF. In this article, we will discuss the applications and working principles of this FET.

Applications

FK3503010L has a wide range of applications. Its high breakdown voltage and low on-resistance makes it suitable for power management, voltage regulating and switching under heavy loads. It can be used in a variety of devices for automotive, industrial, audio and medical applications. Due to its high switching speed, it can be used for high-frequency switching applications such as switched-mode power supplies, RF amplifiers and oscillators. The low input capacitance of the FK3503010L also makes it an ideal choice for use in front-end switching circuits, where high input impedance is required.

The FK3503010L can also be used in battery powered circuits, such as those found in laptops, phones, and tablets. The low on-resistance of this FET allows it to draw very little current, helping to extend battery life. Additionally, its high breakdown voltage makes it suitable for protecting devices from over-voltage and reverse-voltage conditions. The FK3503010L is also commonly used in high-power, low-noise RF amplifiers and oscillators.

Working Principle

The FK3503010L is a field-effect transistor (FET) that uses a three-terminal configuration to transfer current from its source to its drain. The three terminals are the source, gate and drain, with the source providing the input signal and the drain carrying the output. When a positive voltage is applied to the gate terminal, it attracts electrons to the surface of the device, enhancing its conductivity. The amount of current passing through the device is determined by the gate voltage and the gate-source capacitance, C_GS, which is the amount of static charge stored in the gate.

When the gate voltage is increased, it attracts more electrons towards the surface of the device, increasing the current and reducing the resistance. When the gate voltage is decreased, the electrons are repelled, thus reducing the current and increasing the resistance. The maximum current that can be passed through the device is determined by its maximum drain-source voltage, V_DS, and its on-resistance, R_DS. The FK3503010L has a maximum V_DS of 500V and a maximum R_DS of 180mΩ at 4V gate.

Conclusion

The FK3503010L is a high-voltage, high-speed FET transistor that has a wide range of applications, including RF and power management, voltage regulating, and high-frequency switching. It has a maximum breakdown voltage of 500V, with a drain-source on-resistance of 180 mΩ at 4V gate. Additionally, the FK3503010L has high switching speed of 10V/nsec and low input capacitance of 13pF. The working principle of the FK3503010L is based on its gate-source capacitance and the gate voltage, which determine the amount of current that is transferred from the source to the drain.

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