FK3906010L Allicdata Electronics
Allicdata Part #:

FK3906010L-ND

Manufacturer Part#:

FK3906010L

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET N-CH 60V 100MA SSMINI3
More Detail: N-Channel 60V 100mA (Ta) 125mW (Ta) Surface Mount ...
DataSheet: FK3906010L datasheetFK3906010L Datasheet/PDF
Quantity: 1000
6000 +: $ 0.05008
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 125mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Vgs (Max): ±12V
Series: --
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Field-effect transistors (FETs) are electronic devices that are used to amplify a small signal, control the load of a circuit, or block a certain current entirely. They can be either negative or positive voltage operated components. FETs are able to control large current levels more efficiently than bipolar transistors, making them well-suited for power control and signal switching applications. The FK3906010L is an example of an FET. It is a single N-channel high-voltage FET designed to provide control and switching capabilities in power electronics systems.

In its simplest form, an FK3906010L consists of three connections: a gate (G), a drain (D), and a source (S). These are analogous to the base, collector, and emitter of a bipolar transistor. The FK3906010L is a voltage-controlled device, meaning its conductivity is determined by the applied voltage. When the gate is left floating, the device remains off and does not allow any current to flow between the drain and the source. When a voltage is applied to the gate, the FK3906010L will turn on and allow current to flow.

The FK3906010L is designed specifically for power applications. It has a maximum drain-source voltage of 800V and a breakdown voltage of 600V. It also has a very low on-resistance of 0.355 Ω and a maximum continuous drain current of 35A. Its high switching speeds make it ideal for high-frequency applications; it can operate up to a frequency of 200kHz.

The FK3906010L is designed to be used in a variety of power electronics applications such as motor control, automated lighting and HVAC control, and renewable energy systems. It is also used for power supplies, adjustable speed drives, servo systems, and DC-DC converters. In motor control applications, the FK3906010L can be used to accurately control power to the motor by simply varying the applied voltage.

The working principle of an FK3906010L is quite simple. When a voltage is applied to its gate terminal, electron “channels” form between the source and drain terminals. This allows electrons to flow between these two terminals, allowing for current to flow. The magnitude of the current is determined by the amount of voltage applied to the gate terminal. As the voltage increases, so does the current.

In summary, the FK3906010L is a single N-channel high-voltage FET designed to provide control and switching capabilities in power electronics systems. It has a maximum drain-source voltage of 800V, a breakdown voltage of 600V, and a low on-resistance of 0.355 Ω. Its high switching speeds make it ideal for high-frequency applications, and its low on-resistance allows it to handle large current levels. The FK3906010L is used in a variety of power electronics applications such as motor control, automated lighting and HVAC control, and renewable energy systems. The working principle of an FK3906010L is the formation of electron channels between the source and drain terminals when a voltage is applied to its gate terminal, allowing for current to flow.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FK39" Included word is 1
Part Number Manufacturer Price Quantity Description
FK3906010L Panasonic El... 0.06 $ 1000 MOSFET N-CH 60V 100MA SSM...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics