Vgs(th) (Max) @ Id:	1.4V @ 1mA
Package / Case:	3-SMD, Non-Standard
Supplier Device Package:	3-PMCP
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1500pF @ 10V
Vgs (Max):	±12V
Series:	--
Rds On (Max) @ Id, Vgs:	20 mOhm @ 3A, 2.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drain to Source Voltage (Vdss):	24V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The FK3P02110L is a single-channel MOSFET with a logic-level gate threshold voltage. It has a low on-resistance and a low threshold voltage, making it suitable for a wide range of applications. This article will discuss the application field and working principle of the FK3P02110L.

Application Field

The FK3P02110L is primarily used in applications such as circuit protection, DC-DC conversion, gate-drive level shifting and power switching devices. Due to its fast switching speed and low on-resistance, it is also suitable for high-frequency applications.The FK3P02110L\'s low on-resistance makes it ideal for MOSFET-based power converters, such as DC-DC converters, high speed rectifiers, and PFC switch-mode power supplies. It is also used in DC motor drives, AC motor drives, step motor drivers, solar inverters and LED drivers. In addition, it can be used for high-frequency applications, such as high-speed communications networks and RF envelopes.

Working Principle

The FK3P02110L is a single-channel saturated MOSFET. It has a low on-resistance and a low threshold voltage, making it ideal for switching applications. Its logic-level gate threshold voltage makes it easier to control, while its EPCOS Ni-resist NTF porting technology improves the switching performance.When a voltage is applied to the gate of the FK3P02110L, the semiconductor material of the device forms an electric field which, in turn, forms a conductive path between the source and the drain. Thus, an electric current starts to flow through the device.When the voltage applied to the gate is reduced, the conductive path is broken, and the electric current is reduced accordingly. This is the basic operation of the FK3P02110L.

Conclusion

The FK3P02110L is a single-channel saturated MOSFET with a logic-level gate threshold voltage. It is suitable for applications such as circuit protection, DC-DC conversion, gate-drive level shifting, power switching and high-frequency applications. Its low on-resistance and low threshold voltage makes it suitable for MOSFET-based power converters, DC motor drives, AC motor drives, step motor drivers, solar inverters and LED drivers. Its operation is based on the creation and breaking of an electric field between the source and the drain when a voltage is applied to the gate.

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