FK6K02010L Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FK6K02010L is a silicon-on-insulator (SOI) MOSFET device used in a variety of different applications. It is a single-gate, enhancement-mode device with a number of different parameters which make it suitable for a variety of different uses.The FK6K02010L has a low on-resistance of 18 mOhms and a low gate charge of 2.6nC, making it ideal for various high-switching power supply applications. Its low gate charge allows for fast switching speeds of up to 5GHz and high-frequency operations of up to 10GHz.The FK6K02010L also has a low gate-to-source capacitance of 1.5pF, making it suitable for low-noise and low-power circuits. It can also be used in RF applications due to its high breakdown voltage of 60V and high thermal stability.The FK6K02010L has a low on-state resistance of 18 mOhms and a low gate charge of 2.6nC. It also has a high-frequency operation of up to 10GHz and a fast switching speed of up to 5GHz. Its low gate-to-source capacitance of 1.5pF makes it ideal for low-noise, low-power circuits and RF applications.In order to understand how the FK6K02010L works, it is important to first understand the basic principle of a MOSFET. A MOSFET is a type of transistor which uses an insulated gate electrode to control the flow of current between its source and drain. The flow of current is controlled by the voltage applied to the gate. When a positive voltage is applied to the gate, a channel is formed between the source and drain, allowing current to flow. When the voltage is removed, the channel is shut off and the current is blocked. The FK6K02010L is a single-gate, enhancement-mode MOSFET which operates by means of a gate voltage. When a positive voltage is applied to the gate, it creates an inversion layer in the channel, allowing current to flow between source and drain. The low on-state resistance and low gate charge of the FK6K02010L allow for fast switching speeds and high frequency operations. The FK6K02010L can be used in a variety of different applications. It is commonly used in power supply circuits and is ideal for high-switching applications. It can also be used in RF applications due to its high breakdown voltage and high thermal stability. It is also suitable for low-noise, low-power circuits due to its low gate-to-source capacitance. In conclusion, the FK6K02010L is a single-gate, enhancement-mode device which is suitable for a variety of different applications. It has a low on-state resistance of 18 mOhms and a low gate charge of 2.6nC, allowing for fast switching speeds of up to 5GHz and high-frequency operations of up to 10GHz. It also has a low gate-to-source capacitance of 1.5pF, making it ideal for low-noise and low-power circuits. The FK6K02010L can be used in high-switching power supplies, RF applications, and low-noise, low-power circuits.

The specific data is subject to PDF, and the above content is for reference