FK8V03040L Discrete Semiconductor Products |
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Allicdata Part #: | FK8V03040LTR-ND |
Manufacturer Part#: |
FK8V03040L |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N CH 33V 10A WMINI8-F1 |
More Detail: | N-Channel 33V 10A (Ta) 1W (Ta) Surface Mount WMini... |
DataSheet: | FK8V03040L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.41637 |
Vgs(th) (Max) @ Id: | 2.5V @ 1.12mA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | WMini8-F1 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 33V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FK8V03040L is an ideal solution for wide variety of applications due to its high current and low voltage capabilities. This type of device is a power MOSFET, which can be used for switching, amplification, and other analog applications. As a type of transistor, it features ultra-low on-state resistance as well as extremely low gate charge, making it highly efficient and able to reduce system\'s power dissipation.
This MOSFET can operate at a voltage range of 0.4 - 0.8V and current range of 5A - 11A. It has excellent switching characteristics, and has a maximum gate-to-source voltage of -10V to 20V with a drain-to-source voltage up to -12V to 24V. This device is very versatile, capable of long source-to-drain distance and great current rating. It is also optimised for low power loss and fast switching times.
To understand the working principle of the FK8V03040L power MOSFET, it is helpful to understand the basics of MOSFET operation. MOSFET stands for metal-oxide-semiconductor field-effect transistor. It is a three terminal operated device that can act as a switch or amplifier for both analog and digital signals. The control electrodes of the MOSFET, the gate and the drain, provide a voltage difference at the gate. This voltage difference is known as the gate-drain voltage, and is used to control the conductance of the conduction channel.
The gate-drain voltage acts as a gate for an amount of charge. This gate-drain voltage determines the amount of voltage that must be applied to the gate in order to turn the MOSFET on. The amount of charge on the gate determines the amount of current that flows through the MOSFET. This type of control helps to determine the voltage drop across the device, and hence the power dissipation in the system.
The FK8V03040L power MOSFET is useful in applications where low voltage and high current is required due to its low on-state resistance and fast switching characteristics. It is also ideal for applications where high linearity or low noise is required. Some of the other applications of the FK8V03040L include motor control, switch mode power supplies, and power amplifier circuits.
The FK8V03040L power MOSFET makes use of the extreme performance offered by the MOSFET technology. Its optimised structure and wide voltage range provides a unique combination of low on-state resistance and low gate charge, making it suitable for a variety of applications. It is a great device for reducing power dissipation, improving power efficiency, and providing greater system reliability.
The specific data is subject to PDF, and the above content is for reference
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