Allicdata Part #: | FKI10126-ND |
Manufacturer Part#: |
FKI10126 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 100V 41A TO-220F |
More Detail: | N-Channel 100V 41A (Tc) 42W (Tc) Through Hole TO-2... |
DataSheet: | FKI10126 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.49882 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.6 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 88.8nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6420pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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The FKI10126 MOSFET is a type of metal–oxide–semiconductor field effect transistor (MOSFET). A MOSFET is a type of transistor that is used for amplifying or switching electrical signals. It is a four terminal device, with the source (S), gate (G), drain (D) and body (B) terminals. FKI10126 is one of the few types of MOSFETs that can be found in the market, and is part of a new series of Single MOSFETs.
The FKI10126 is a single-input N-channel MOSFET. N-Channel MOSFETs are transistors in which the channel contains mainly electron (a negative electrical charge) carriers. When less than the predetermined voltage is applied to the gate, the force of the push-pull transistors are too weak and the current passing through the transistor will not be affected. When the predetermined voltage is applied, the force of the push-pull transistors become stronger and electrons passing through the channel - connecting source and drain terminals - will be attracted to the gate and will cause an increase in current.
The FKI10126 is particularly suitable for switching and/or amplifying applications. It has an on-resistance of about 2.4 ohms and maximum operating temperature of 150°C. With its on-resistance and gate characteristics, the FKI10126 is usually used as an amplifier with high current load driving capabilities. It is also suitable for use as a switch, allowing the control of power devices in industrial environments.
It’s working principle is fairly simple. It is triggered by the voltage that is applied at the gate terminal. When a voltage is applied, the electric field set up by this voltage will create an electrostatic force that will push the electrons away from the gate and towards the drain of the FKI10126. This will, then, allow current to flow through the transistor. When the applied voltage is no longer present, the gate will be neutral and no current will flow.
In summary, the FKI10126 MOSFET is a single-input N-channel transistor that is perfect for use in amplifying and/or switching applications. It is capable of withstanding high current loads, thus making it a reliable choice for industrial use. When activated with the appropriate voltage, the transistor will be able to switch and/or amplify electrical signals efficiently. Its working principle is easy to understand, involving the creation of an electrostatic force that will push the electrons away from the gate, thus allowing current to flow through the FKI10126.
The specific data is subject to PDF, and the above content is for reference
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