Allicdata Part #: | FKP300A-ND |
Manufacturer Part#: |
FKP300A |
Price: | $ 2.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 300V 30A TO-3PF |
More Detail: | N-Channel 300V 30A (Ta) 85W (Tc) Through Hole TO-3... |
DataSheet: | FKP300A Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 2.63103 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PF |
Package / Case: | TO-3P-3 Full Pack |
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The FKP300A transistor is a N-channel enhancement-mode field effect transistor, created by Fairchild Semiconductor. It is designed for high speed switching applications in the VDS (drain-source voltage) range from 0 to 300 Volts. The device can handle up to 7 Amps of current and has a power dissipation range of 1520 mW. It is built using a process technology called FKP which combines the stability of gold-silicon gates and gold-aluminum interconnects, with the low resistance of dielectric isolation.
The basic principle of operation for field effect transistors (FETs) is similar to bipolar junction transistors (BJTs). Just as the BJT operates using charge carriers, the FET operates using electrostatic forces between the source, gate, and drain. When a voltage is applied to the gate, it produces an electric field that modulates the flow of charge carriers, and thereby controls the current from source to drain. This is the same principle that is used in the FKP300A, however the FKP300A uses a special type of FET known as a metal-oxide-semiconductor field-effect transistor (MOSFET).
MOSFETs are constructed differently than traditional FETs, which use the nuclei of two adjacent N-type or P-type materials to create a potential space between the source and the drain. The MOSFET is unique in that it uses a metal gate instead of a traditional gate to control current flow. This allows the MOSFET to operate at higher frequencies and achieve higher breakdown voltages than other FETs. Additionally, by using a very thin dielectric (insulating) layer between the metal gate and the channel, the MOSFET has the advantage of extremely low gate capacitance. This ensures a fast switching time and high power efficiency, which are especially important for high-speed switching applications like the FKP300A.
In addition to its high power efficiency, the FKP300A transistor also has the advantage of being built using Fairchild’s patented FKP technology, which combines the best properties of silicon and aluminum. The FKP technology yields low power consumption, low power dissipation, and excellent temperature stability, making it ideal for use in high-power switching applications. The FKP300A is a perfect example of the potential that this technology offers, and shows how advanced the technology has become.
The FKP300A is a powerful and reliable transistor that is perfect for many high-speed switching applications. By combining the best properties of both metal and silicon, Fairchild’s FKP technology ensures high power efficiency and excellent temperature stability. This makes the FKP300A an ideal choice when looking for a reliable and powerful transistor.
The specific data is subject to PDF, and the above content is for reference
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