| Allicdata Part #: | FKV550N-ND |
| Manufacturer Part#: |
FKV550N |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | MOSFET N-CH 50V 50A TO-220F |
| More Detail: | N-Channel 50V 50A (Ta) 35W (Tc) Through Hole TO-22... |
| DataSheet: |  FKV550N Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.2V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 10V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Ta) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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The FKV550N is a Field-Effect Transistor (FET) designed for power supply, high-frequency amplification, and general switching applications. It is a single-circuit FET, offering an on-state voltage of up to 560 V, a drain current of up to 17 A, and a power dissipation of up to 55 W. It is defined by an optimal combination of high gain, low noise, and low switching loss. This article will discuss the application field and working principle of the FKV550N.
Application Fields
The FKV550N is a general purpose FET that can be used in a variety of applications. It is particularly suited for high-power supply, high-frequency amplification, and general switching. It has low on-state voltage and low on-state switching loss, so it can be used in DC-DC converters, motor speed control, and active power factor control applications. It is also suitable for high-frequency switching applications such as inverters, frequency excitation and commutation, and RF signals.
The FKV550N is ideal for use in high-current switching applications such as automotive applications, particularly in engines, brakes, and automatic transmission systems. It can be used for power management in telecom and computer systems due to its low noise and switching loss. It is also often used for lighting control and ballast applications.
Working Principle
The FKV550N is a single FET that operates based on the field-effect principle. This means that it uses an electric field to control the current flowing through the device. The device consists of a source, a gate, and a drain. The source and drain are electrically connected to form an N-channel, and the gate is connected to a gate voltage. When a negative voltage is applied to the gate, the N-channel is activated and current flows from the source to the drain. This forms the basic operation of an FET.
The FKV550N is designed with a low gate threshold voltage, which improves its switching speed and reduces power losses. The FKV550N is also designed to have a low on-state voltage and a low on-state switching loss, which improves its efficiency. It also has a high drain current, which allows it to handle higher currents without overheating.
The FKV550N is a versatile FET with a wide range of applications. It is often used in power supply, high-frequency amplification, and general switching applications. Thanks to its low on-state voltage, low switching loss, and high current capability, it can be used in a variety of situations, ranging from DC-DC converters to engine management systems. It is a reliable and efficient FET.
The specific data is subject to PDF, and the above content is for reference
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