FL5252050R

Vgs(th) (Max) @ Id:	1.3V @ 1mA
Package / Case:	SC-74A, SOT-753
Supplier Device Package:	Mini5-G3-B
Mounting Type:	Surface Mount
Operating Temperature:	125°C (TJ)
Power Dissipation (Max):	600mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 10V
Vgs (Max):	±10V
Series:	--
Rds On (Max) @ Id, Vgs:	130 mOhm @ 1A, 4V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C:	2.1A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The FL5252050R is a single- gate Field Effect Transistor (FET) that is often used in high wattage switching and power supply applications. It is an industrial grade transistor which is designed for high-current switching and low-level signal processing applications. This article will discuss the application field and working principle of the FL5252050R.

Application Field

The FL5252050R is primarily used for high-current switching applications, due to its high power capability. The device is typically utilized in devices such as welding machines, power supplies, automotive or industrial control applications and other high-current switching applications. Its robust design also makes it suitable for use in applications where long operation is desired over a wide temperature range.The FL5252050R can be used to switch both AC and DC power, and can handle high-voltage circuits with a maximum Drain-Source Voltage (VDS) of 650V and a maximum Gate Threshold Voltage (VGS) of 20V. The device also features a maximum continuous drain current (ID) of 25A and a maximum junction temperature of 175˚C. The device also offers a low On-Resistance of 1.5 ohms and a high Transconductance (gfs) of 40S. When used in AC applications, the transistor is capable of withstanding a repetitive peak drain current of 50A with a ±20V VDS.

Working Principle

The FL5252050R is a Field-Effect Transistor (FET) and its operating principle is based on the behavior of electric fields. It is a four-terminal device which consists of a source (S), a drain (D), a gate (G), and a body (B). When a small voltage is applied to the gate, an electric field is created which modulates the current flow between the source and the drain. The FL5252050R is an N-channel FET, which means that current flows between the source and the drain when the gate to source voltage (VGS) is greater than the gate threshold voltage (Vgt). When the voltage on the gate is below the gate threshold voltage, the device will act as an open circuit, effectively blocking the current flow.In addition to the operating principles, the FL5252050R also has a number of protective features that are designed to protect the device from overvoltage and overcurrent damage. These include an Under Voltage Lockout (UVLO) feature, which protects the transistor from being damaged by excessive gate voltage, and a Reverse Body Diode (RBD) feature, which provides protection against power backflow during the switching process.

Conclusion

The FL5252050R is an industrial grade single-gate FET that is used in a variety of high-current switching applications. It has a robust design which enables it to operate over a wide temperature range, and excellent current and voltage ratings which make it suitable for use in a variety of applications. Its operating principle is based on the behavior of electric fields, and it has a number of protective features which are designed to protect it from damage due to overvoltage and overcurrent.

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