FMD21-05QC Discrete Semiconductor Products

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The FMD21-05QC is a N-channel Enhancement Mode Insulated Gate Bipolar Transistor (IGBT) specifically designed for high performance and high frequency applications. It is a 55V logic level gate, buffered gate driver. It has low on-state resistance and low gate charge combined with controllable oscillation frequency for improved switching performance. It is an ideal component for low power applications, like power switches, motor controllers, solenoid drivers, and other logic-level amplifiers.

The FMD21-05QC uses a unique process that combines the industries lowest on-state resistance with superior high frequency characteristics to improve system efficiency and static power consumption while providing reliable device performance. The two main components of the FMD21-05QC are its gate driver and N-Channel Enhancement mode MOSFET. The gate driver is designed to control the gate-source voltage of the MOSFET and enable high speed switching operation up to 200 kHz with improved power efficiency and reliability. The FMD21-05QC\'s N-Channel Enhancement MOSFET structure is optimized to operate at high frequencies while providing low on-state resistance and low gate charge. Its structure allows high currents of up to 20A to be switched at high speeds. The MOSFET is protected from electrostatic and static discharge by an integrated body diode.

The FMD21-05QC has a modular design, allowing for easy circuit layout. The FMD21-05QC\'s gate driver is the first of its kind to provide high speed operation with improved power efficiency and reliability. It is a three stage bipolar driver with high frequency switching capabilities up to 200kHz. Additionally, its gate driver has a built-in linear regulator that controls the gate-source voltage of the MOSFET, preventing excessive switching losses. The FMD21-05QC\'s gate driver also has an adjustable template that allows customers to fine-tune their circuit design to operate at the optimal frequency.

The FMD21-05QC\'s N-Channel Enhancement MOSFET is designed to enable low-power switching up to 20A and low-voltage operation. Its structure improves the loading and stability of high-frequency operations while providing improved energy efficiency and reliability. It has an integrated body diode, preventing electrostatic and static discharge damage.

The FMD21-05QC provides excellent performance as a low-cost switch and motor controller for battery operated applications. Its unique design gives it superior performance over traditional transistors for battery applications. Its low on-state resistance helps reduce switching losses, reducing the power consumption and increasing the efficiency of the system. Combined with its high frequency operation, the FMD21-05QC is the perfect choice for portable and low power applications.

In conclusion, the FMD21-05QC is the perfect choice for high performance and high frequency applications. Its modular design and low on-state resistance makes it an ideal choice for low power applications, such as power switches, motor controllers, solenoid drivers, and other logic-level amplifiers. Its integrated body diode provides protection from electrostatic and static discharge. With its superior performance and reliability, the FMD21-05QC is perfect for any low-cost switch and motor controller, giving excellent performance and reliability at an affordable cost.

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