FMD40-06KC Allicdata Electronics
Allicdata Part #:

FMD40-06KC-ND

Manufacturer Part#:

FMD40-06KC

Price: $ 13.55
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 38A I4-PAC-5
More Detail: N-Channel 600V 38A (Tc) Through Hole ISOPLUS i4-P...
DataSheet: FMD40-06KC datasheetFMD40-06KC Datasheet/PDF
Quantity: 1000
25 +: $ 12.31750
Stock 1000Can Ship Immediately
$ 13.55
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Package / Case: i4-Pac™-5
Supplier Device Package: ISOPLUS i4-PAC™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: Super Junction
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FMD40-06KC is a fast switching, logic level enhancement type N-channel power field effect transistor (MOSFET) originally developed by ST Microelectronics. It was designed for use in load switch applications, specifically as an ideal switch for applications not requiring isolation or other features of bipolar transistors. The FMD40-06KC is a voltage-controlled, N-channel enhancement-mode power MOSFET that can be driven directly from logic gates. It has a low on-state resistance combined with low gate charge, and extremely fast switching rates.

The IC is offered in a small but powerful 4-pin SO4 package. It offers a low On-state resistance of 39 milliohm, a maximum gate threshold voltage of 4.5V, and a low gate charge of 11.7ʿC. It also has good thermal and safe operating area performance, providing a large current capacity. It is well suited for use in portable and telecom applications with supply voltages up to 24V.

The FMD40-06KC is designed to switch large amounts of current with high-speed switching and low gate threshold. When properly implemented in an application the device is able to switch up to 40V at levels up to 6A. As a logic level device, it is capable of controlling the power supply to a load by using logic level signal inputs. Unlike traditional bipolar Junction Transistor (BJT) switches, the FMD40-06KC does not require a base series or pull-up resistor, reducing the total number of components needed in a circuit.

If the Gate voltage of FMD40-06KC MOSFET is equal to or higher than the threshold voltage, the drain-source channel is enabled and the current flows freely from drain to source. When Gate voltage is lower than the threshold voltage, the drain-source channel completely shuts off the current, and therefore no power is consumed by the FMD40-06KC. The FMD40-06KC-MOSFET can be operated in saturation, enhance, cutoff and linear regions depending on the voltage applied to the gate.

The FMD40-06KC is primarily used in low voltage, power ON/OFF switch applications to regulate current levels. It can also be used in off–line switching power supplies, motor control systems, DC-DC converters, and other applications with high-speed switching requirements. It is often used to switch power supplies in many computers and other health and safety equipment.

The FMD40-06KC is an ideal device for applications requiring high-speed switching capabilities, low on-state and threshold voltages, and low gate charging times. It also provides good thermal characteristics, making it suitable for low power and high-speed switching applications. Also, it offers a lower series resistance than commonly used MOSFETs, allowing for a faster switching transition.

The specific data is subject to PDF, and the above content is for reference

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