| Allicdata Part #: | FQD9N08TM-ND |
| Manufacturer Part#: |
FQD9N08TM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 80V 7.4A DPAK |
| More Detail: | N-Channel 80V 7.4A (Tc) 2.5W (Ta), 25W (Tc) Surfac... |
| DataSheet: |  FQD9N08TM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 210 mOhm @ 3.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FQD9N08TM is a high voltage N-channel field effect transistor designed for use in power management applications like power converters and motor control. This device is designed to operate over a wide range of temperatures and offers a low gate charge for fast switching. It is suitable for use in high-side and low-side switching applications in power converters and is robust enough to handle high transient currents.
The FQD9N08TM is a N-channel enhancement mode MOSFET. Its drain current is controlled by its gate voltage, making it suitable for high side and low side applications. Its gate-source voltage (Vgs) has a minimum Vgs(th) of 8V. This means the FQD9N08TM can easily be used for switching at voltages up to 200V. It also features superior thermal characteristics, making it suitable for use in high-temperature applications.
The FQD9N08TM has a maximum drain current (Id) of 8A and a maximum drain-source voltage (Vds) of 100V. These parameters make the device suitable for a wide range of applications. This device is well suited for applications that require high speed switching such as DC to DC converters, motor control applications, and other high voltage power management systems.
The FQD9N08TM also has excellent temperature characteristics. Its threshold voltage (Vgs (th)) has a low temperature coefficient, which allows for good temperature stability. Its On-Resistance (Rds(on)) has a fast switching time and low gate charge (Qgs), allowing for faster switching and less overall power consumption.
The FQD9N08TM is ideal for high voltage applications and power management systems. It offers excellent switching performance, a wide range of operating voltages, and robust thermal characteristics. It is well-suited for use in high-side and low-side switching applications in power converters.
The specific data is subject to PDF, and the above content is for reference
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