Allicdata Part #: | FQE10N20CTU-ND |
Manufacturer Part#: |
FQE10N20CTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 4A TO-126 |
More Detail: | N-Channel 200V 4A (Tc) 12.8W (Tc) Through Hole TO-... |
DataSheet: | FQE10N20CTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 12.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Field-effect transistors (FETs) are one of the vital components in the electronics industry, and the FQE10N20CTU is one of the most commonly used FET types. It is a N-Channel MOSFET transistor with a breakdown voltage rating of 200 Volts and drain source current rating of 10 milliamps. FQE10N20CTUs are typically used in high-current switching applications, due to their low voltage requirements and higher peak current ratings compared to BJTs.
The working principle of the FQE10N20CTU is based on the MOSFET transistors, which are specifically designed to be used in electronics projects. A MOSFET transistor is a unipolar semiconductor device that has a gate and one or more source and drain terminals. When the potential difference between the gate and source terminals is increased, the current flow between the source and drain terminals increases. This is known as the MOSFET switch, in which the current can be easily switched on and off.
In addition to high-current switching applications, FQE10N20CTUs are also often used in amplifying and noise reduction applications. This is because they have a low input impedance, meaning they can be used to accurately control the voltage levels of a signal and reduce interference. They are also popularly used in applications such as motor control, power converters, and power supplies.
When using the FQE10N20CTU MOSFET transistors, it is important to follow certain precautions. These include not exceeding the breakdown voltage rating of 200 Volts and drain source current rating of 10 milliamps, as doing so can cause the device to become damaged. It is also important to use an appropriate heat sink when applying high power levels, as the heat generated from the device can cause damage to other components in the circuit.
In conclusion, the FQE10N20CTU is a popular MOSFET transistor for use in high-current switching, amplifying, and noise reduction applications. When using these transistors, it is important to make sure that the current and voltage ratings are not exceeded, and to use an appropriate heat sink when applying high power levels.
The specific data is subject to PDF, and the above content is for reference
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