FQH18N50V2

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	277W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3290pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	265 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The FQH18N50V2 is a wide range high voltage N-Channel MOSFETs used for applications ranging from switch mode power supplies (SMPS) to automotive and industrial power versions. Its low on-resistance makes it ideal for use in DC/DC converters, motor drives, and voltage step-up/down converters.N-Channel MOSFETs or metal-oxide-semiconductor field-effect transistors (MOSFETs) are active devices typically used as low side switches. These transistors have an input terminal that controls the flow of electrons through the gate channel, and an output terminal that controls the current flow through the source and drain terminals.The FQH18N50V2 is a single N-Channel MOSFET which means the device is made up of one MOSFET and consists of three terminals: the gate, the drain and the source. The purpose of this MOSFET is to control the voltage and/or current applied to a load. It can turn the load on and off, depending on the gate voltage and how much current goes through the source and drain terminals.With the FQH18N50V2, the gate voltage needs to be higher than a certain threshold voltage for the transistor to turn on. This threshold voltage is usually between 1V and 4V depending on the type of MOSFET. When the voltage applied to the gate is higher than the threshold voltage, the FQH18N50V2 will conduct and produce current, otherwise it will not conduct and remain in an off state.The FQH18N50V2 excels at switching applications due to its low on-resistance, which is the resistance between the source and the drain when the MOSFET is on. With a low on-resistance, less heat is produced by the burden resistor which helps to increase efficiency and reduce power dissipation.The power dissipation of the FQH18N50V2 will depend on the current and voltage applied to the device. The power dissipation of this MOSFET is about 60W at 66A, 40V. The FQH18N50V2 can also handle a peak diode current of 66A, so it is well suited for applications such as DC/DC converters and motor drives.The FQH18N50V2 can operate from -55°C to 175°C and is the ideal device for use in automotive, industrial, and other high temperature applications. The package for this MOSFET is a DPAK, or a dual-tab package which allows for a greater effective heat transfer area and lower thermal resistance.The FQH18N50V2 is a great option for applications that require high performance and reliable switching. With its low on-resistance and high voltage range, this MOSFET is the perfect choice for a wide range of applications. This MOSFET is well suited for automotive, industrial, and other high temperature applications, making it a great option for all types of projects.

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