Allicdata Part #: | FQH44N10-ND |
Manufacturer Part#: |
FQH44N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 48A TO-247 |
More Detail: | N-Channel 100V 48A (Tc) 180W (Tc) Through Hole TO-... |
DataSheet: | FQH44N10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQH44N10 is the most commonly used MOSFET in the market. It is a low-cost, high performance N-channel MOSFET that has a variety of applications and wide usage. The FQH44N10 is used in applications such as switching, power dissipation, power control, signal conditioning, voltage regulators and many more. The major application areas include: DC motors, AC motors, switching power supplies, drive circuits, power conditioning and low-voltage power sources.
The FQH44N10 MOSFET is designed for efficient operation and high-speed switching. Its N-channel MOSFET has a low on-resistance and high switching capability that is used to minimize power dissipation. It features a low input capacitance and low gate-to-source capacitance to minimize switching time and reduce power dissipation. The FQH44N10 also has low leakage current and good thermal characteristics to minimize power dissipation and reduce switching losses.
The FQH44N10 has a working principle that involves the application of an electric field to a channel of a semiconductor material. This electric field then creates a potential barrier between the channel that allows majority carriers to travel through it. When an appropriate electric field is applied through the Gate terminal of the FQH44N10, it controls the path of electrons through the MOSFET. The length of the channel is determined by the voltage applied to the Drain terminal, which effectively controls the current flow through the FQH44N10 MOSFET. The current varies according to the voltage applied to the Gate terminal.
The FQH44N10 is the most popular and widely used MOSFET in the market. It is suitable for high-performance applications due to its high switching speeds and its low input capacitance. It is also suitable for applications requiring low power dissipation. The FQH44N10 is widely used in the manufacture of high-performance power supplies, drive circuits and low-voltage power sources. The FQH44N10 is widely used in switching applications, power regulators and DC motors.
In conclusion, the FQH44N10 is a widely used MOSFET with a variety of applications. The FQH44N10 has a low on-resistance and high switching capability, which makes it a great choice for low dissipation power supplies. It has a low input capacitance and low gate-to-source capacitance, which provides for fast switching and low power dissipation. The FQH44N10 operates on the principle of an applied electric field to a channel of a semiconductor material. This electric field creates a potential barrier between the channel and allows majority carriers to travel through it. The FQH44N10 is suitable for high performance applications due to its high switching speed and low input capacitance, and is widely used in the production of power supplies, drive circuits, and low-voltage power sources.
The specific data is subject to PDF, and the above content is for reference
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