FQH70N10

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	214W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3300pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	23 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQH70N10 Application Field and Working Principle

The FQH70N10 is a N-channel Trench MOSFET that has been designed for high-speed switching applications. It offers some special features such as low on-state resistance and excellent performance when operating with a low gate voltage. The device is a cost-effective solution for applications such as motor control, power management, and telecommunication systems.The FQH70N10 is a power MOSFET which provides superior power handling and thermal properties due to its advanced trench technology and architecture. The MOSFET utilizes a high-voltage N-channel MOSFET in a standard SOIC-8 package or a dual SOIC-14 package. The device is capable of blocking voltages up to 700 V and has a threshold voltage of 4 V. It also offers an industry-leading on-resistance of 10 mΩ, making it an ideal choice for high-power applications.The FQH70N10 MOSFET has an innovative design that helps reduce the gate-to-source capacitance, gate-to-drain capacitance, and switching losses resulting from driving high-side capacitive loads. The device also has a unique drain-to-body diode that helps reduce the inductive switching losses which occur when the FET conducts in both directions.As a power MOSFET, the FQH70N10 has built-in protection features, such as current limiting and thermal shutdown, which can safeguard the device from over-voltage and over-current. Furthermore, the device also has built-in ESD protection to prevent damage from electrostatic discharge.The FQH70N10 works by performing a voltage control function in which a voltage control signal is applied to the device\'s gate terminal, thus changing the resistance between the source and the drain terminals. When a voltage higher than the threshold voltage is applied to the gate terminal, the channel between the source and the drain terminals is "enhanced", and the device is turned on due to the increase in conductivity between the two terminals. On the other hand, when a voltage lower than the threshold voltage is applied to the gate terminal, the channel between the source and the drain terminals is "depleted", and the device is turned off due to the decrease in conductivity between the two terminals.The FQH70N10 is a versatile power MOSFET that can be used in a wide range of applications. Its low on-state resistance, fast switching speed, and excellent thermal properties make it an ideal choice for power distribution and voltage regulation applications, as well as applications that require tight control over power delivery. In addition, its excellent ESD protection and built-in over-current and over-temperature protection ensure that the device works reliably in a variety of environments.

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