Allicdata Part #: | FQH8N100C-ND |
Manufacturer Part#: |
FQH8N100C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 1000V 8A TO-247 |
More Detail: | N-Channel 1000V 8A (Tc) 225W (Tc) Through Hole TO-... |
DataSheet: | FQH8N100C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 225W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3220pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.45 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQH8N100C, also known as a power field-effect transistor (FET), is a type of transistor commonly used in switching and amplifier applications. The FQH8N100C has a drain current rating of 8 amperes (A) and 100 volts (V) drain-source breakdown voltage rating, hence the “8N100C” in the name.
Like other FETs, the FQH8N100C works by using an electric current applied to the gate, to control the conductivity of the drain-source channel. When voltage is applied to the gate, a current will flow between the source and drain, allowing the FET to act as a switch or an amplifier. Since the drain current is determined by the gate voltage, the FQH8N100C allows extremely precise control over a high current.
The FQH8N100C is commonly used as an electronic switch for controlling power supply lines in consumer electronics, such as televisions, computers, laptop computers, and other devices. The FQH8N100C can also be used in industrial applications, such as motor controllers, HVAC systems, and industrial robots. Because of its extremely high current and voltage ratings, the FQH8N100C is also used in safety circuits, such as the ground fault circuit interrupter (GFCI) found in many residential and commercial buildings. The FQH8N100C is also commonly used in high-power audio amplifiers.
In addition to its uses as an electronic switch and amplifier, the FQH8N100C can also be used as a power semiconductor for controlling and managing power. This sort of application requires specialized circuit designs and knowledge of power management, however, and is not recommended for the novice.
The FQH8N100C is a versatile component, but due to its 8A and 100V ratings, it is not suitable for every application. Careful consideration must be taken when designing with the FQH8N100C, as its power handling capabilities are significantly more than those of other FETs.
In conclusion, the FQH8N100C is a power FET, with an 8A and 100V rating, primarily used in switching and amplifier applications. With careful consideration, the FQH8N100C can also be used in power management applications, however, it is important to be mindful of its higher than average power handling capability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FQH8N100C | ON Semicondu... | -- | 1000 | MOSFET N-CH 1000V 8A TO-2... |
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