FQN1N50CTA Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQN1N50CTA is a type of Field-Effect Transistors (FETs), specifically a single Metal-Oxide-Semiconductor FET (MOSFET). The FQN1N50CTA is a general-purpose part intended for high-current, high-voltage, low-pressure switch applications, such as switching power supplies, rectifiers, and lamp-drivers.

FQN1N50CTA function is based on a principle called the MOS effect. In a MOSFET device, electrical signals applied to the gate pin create an electric field that modifies the conductivity of the channel, when the gate-to-source voltage exceeds the threshold voltage, allowing current to flow between the source and drain pins. One of the main advantages of the MOSFET is its very high input impedance, which allows for an extremely efficient and precise control of the current or voltage to the load. The FQN1N50CTA has a typical input impedance of 10^12 (10 teraohms) at ROs2.

The FQN1N50CTA has a maximum drain-to-source voltage (VDSS) of 500 volts, a source-drain current rating (ID) of up to 2.5 amps, and a gate-source augmented voltage (VGS) of 4 volts. The FQN1N50CTA has additional features that make it especially suitable for switching applications, such as a low drain-source saturation voltage (VSD) of 30 volts and a low gate-source capacitance (CGS) of 0.6 pF. Additionally, the FQN1N50CTA is very temperature stable, with a maximum thermal resistance of 165°c/W.

The FQN1N50CTA is ideally suited to applications requiring robust switching performance such as DC-DC converters, self-powered sensor switches, battery protection circuits, and power automation controllers. In many applications, the FQN1N50CTA will outperform traditional switching devices in terms of speed, efficiency, and power density. As a general-purpose switching device, the FQN1N50CTA can be used as a single-chip solution in a wide variety of applications. It is also often used in conjunction with other FETs and integrated circuits to create more complex switch systems.

In summary, FQN1N50CTA offers excellent high current, high voltage, and low gate-source capacitance switching performance. It has a very high input impedance and offers excellent temperature stability, making it well suited for a wide variety of switch applications. With its combination of features, the FQN1N50CTA is an ideal choice for general-purpose switching applications.

The specific data is subject to PDF, and the above content is for reference