Allicdata Part #: | FQU5N40TU-ND |
Manufacturer Part#: |
FQU5N40TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 3.4A IPAK |
More Detail: | N-Channel 400V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Throu... |
DataSheet: | FQU5N40TU Datasheet/PDF |
Quantity: | 3221 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQU5N40TU is a type of Field Effect Transistor (FET). It is a transistor in which the current flows between the source and drain regions is regulated by a gate voltage. FQU5N40TU transistors are used in communications equipment, wireless devices, and computers, where low power consumption and large current drive capability are needed. Furthermore, it can also be used to control light emitting diodes.
A FQU5N40TU is a 4-terminal device composed of source, drain, and gate terminals, plus a substrate connection terminal, usually connected to the source. These terminals collectively control the current flowing through the channel, which is determined by the voltage applied to the gate terminal. When the voltage on the gate terminal is increased, the electrons in the channel move further away. When the voltage is decreased, the electrons are forced back into the channel. This change in the electron density creates a current in the channel, allowing the desired voltage to be controlled by a source applied to the gate terminal.
In addition to its four terminals, the FQU5N40TU is also composed of a semiconductor material, typically gallium arsenide operated in the depletion mode. This material acts as a switch and allows or restricts the flow of current between the source and drain terminals based on the gate voltage. When the source voltage is 0V, the FET is considered off, no current flows through the channel, and the output is 0V. When the source voltage is increased, the electron density in the channel decreases and the drain current is increased.
The FQU5N40TU can be used to construct many types of circuits, including logic gates, amplifier circuits, and power control circuits. It is also suitable for low-frequency applications, as the gate capacitance can be reduced by adding a metal shielding around the gates.
Furthermore, FQU5N40TU transistors can be used in audio amplifiers, radio frequency amplifiers, and power control circuits. They provide high current gain and low operating power, making them suitable for a wide range of applications. Additionally, FQU5N40TU transistors are available in a wide variety of packages, making them easy to incorporate into a range of circuits.
The FQU5N40TU transistor is an ideal choice for a wide range of applications where high current drive, low power consumption, and switching capabilities are required. They are also available in a variety of packages, making them adaptable to different circuit configurations. Their strong current gain and low operating power make them suitable for a wide range of audio, radio frequency, and power control applications.
The FQU5N40TU transistor is a perfect choice for a wide range of applications. It is reliable, easy to use, and available in a wide variety of packages. This makes it possible to incorporate it into a variety of circuits and applications, from audio amplifiers to power control systems. Its ability to switch on or off depending on the gate voltage makes it suitable for low-frequency applications as well as for high-speed circuits.
The specific data is subject to PDF, and the above content is for reference
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