FS200R12KT4RPBPSA1

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FS200R12KT4RPBPSA1 is a module that is part of the Transistors - IGBTs - Modules category. It is manufactured by Fujitsu Semiconductor and it is characterized by its high power efficiency, low on-state resistance and robust design.

The FS200R12KT4RPBPSA1 module has a wide range of applications. It can be used for motor drives, UPS systems, welding machines, solar power systems, and more. In addition, it is ideal for high switching frequency applications due to its low switching noise. Furthermore, its high current capacity makes it suitable for applications such as power factor correction (PFC) and active clamping.

The working principle of the FS200R12KT4RPBPSA1 module is based on IGBTs (insulated gate bipolar transistors). IGBTs combine the properties of both MOSFETs (metal oxide semiconductor field effect transistors) and bipolar transistors. This allows them to have a high switching frequency and low on-state resistance, while also providing excellent thermal and electrical stability. This is why IGBTs are preferred over other types of power semiconductors in most applications.

The FS200R12KT4RPBPSA1 modules include two IGBTs per circuit. The IGBTs are connected in parallel and have an anti-parallel gate connection. This means that one of the IGBTs conducts during positive current, while the other conducts during negative current. This design allows for high frequency operation and low conduction losses.

The module also includes a reverse recovery diode (also known as a snubber diode). This diode helps prevent the IGBTs from being damaged during an overload or when high frequencies are applied to the circuit. The diode helps to limit the back EMF (electromotive force) generated by the coil during switching and thus, reduce the magnitude of the current flowing through the circuit.

The FS200R12KT4RPBPSA1 module is a versatile and reliable device. Its design and features make it suitable for a wide range of applications. It is also extremely efficient, which makes it an ideal choice for applications that require high power efficiency and low on-state resistance.

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