Allicdata Part #: | FS75R07N2E4B11BOSA1-ND |
Manufacturer Part#: |
FS75R07N2E4B11BOSA1 |
Price: | $ 52.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO2-6 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS75R07N2E4B11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 48.15240 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 75A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4.6nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FS75R07N2E4B11BOSA1 is an IGBT module. IGBT stands for Insulated Gate Bipolar Transistor, which is a type of transistor combining the best qualities of both MOSFET- based and bipolar transistors. The FS75R07N2E4B11BOSA1 is a high current IGBT module, meaning that it is able to handle larger current flows than other similar IGBT models. IGBT modules generally consist of an IGBT and its associated protection circuitry, housed in a protective package.
The FS75R07N2E4B11BOSA1 is a high voltage IGBT module, designed to handle up to a maximum blocking voltage of 1700V. It has excellent thermal performance and is rated for up to 80A continuous collector drain current, and 90A pulsed current. Its switching frequency is up to 25 KHz, making it suitable for use in a wide range of applications.
Applications of the FS75R07N2E4B11BOSA1 include motor control, DC/AC conversion, up/down converters, servo and power supplies, induction heating, and electronic ballasts. It is used in motor applications for high power switching of DC or AC, in DC/AC conversion due to its high voltage rating and current capacity, and in up/down converter circuits. It is also used in solar inverters, HVDC transmission systems, and semiconductor chip testers.
The working principle of the FS75R07N2E4B11BOSA1 is based on the standard IGBT model. When a voltage is applied to its gate, it controls the flow of current between its two terminals. Depending on the voltage applied, its junction structure allows for the current to flow in either an n-type or a p-type direction. The junction also contains insulation layers between the n-type and p-type structures. This is what allows it to handle a high voltage without risk of breakdown.
The FS75R07N2E4B11BOSA1 uses slower switching speeds than a MOSFET based IGBT, but at higher capacity. It is well suited for applications requiring soft switching and motor control, as its lower switching time allows for more accurate control of the current flow. It is also ideal for high power and high frequency switching, as it can handle more current than other models of IGBT. In general, the FS75R07N2E4B11BOSA1 is a reliable and efficient IGBT module, capable of handling large current requirements while offering excellent thermal performance.
The specific data is subject to PDF, and the above content is for reference
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