FS75R12KE3BOSA1

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When an application requires higher power than a basic transistor can handle, an insulated-gate bipolar transistor (IGBT) can be employed. The FS75R12KE3BOSA1 is an IGBT-based module designed for high power applications with features specifically tailored to those needs.

The FS75R12KE3BOSA1 is capable of a 75 amp maximum current rating, with a 12 kilovolt maximum voltage distance. It requires a minimum of 3.2 amps of gate drive current to open and close properly, and features an integrated FWD voltage of 925 volts@1A and a reverse-loss / leakage current of 0.5mA@12KV. The temperature range in which the module can operate is -40° to +150° Celsius, while derating should be employed below 25° Celsius.

The module can be employed in many high power applications and is designed specifically for use in electric drives, traction control and power control. Due to its high current handling, the FS75R12KE3BOSA1 is ideal for applications where a high power-handling capability is required, such as electric locomotives and heavy machinery.

The FS75R12KE3BOSA1 module employs an insulated-gate bipolar transistor, also known as an IGBT. An IGBT is a type of semiconductor device that is used to control both current and voltage and is composed of an insulated-gate field-effect transistor (IGFET) and a bipolar transistor, which are placed in close proximity.

The IGBT\'s functional principle is rather simple. When the gate voltage is provided with the right values, the IGBT turns on. When the gate voltage is either reduced or reversed, the IGBT turns off, thus controlling the current flow. The combination of the IGFET and the bipolar transistor allows for high power handling and high speed switching.

The FS75R12KE3BOSA1 also features several protection features. Short circuit, over temperature and over voltage protection are integrated, ensuring that the module can be used safely and efficiently in high power applications. The module also employs a three-level gate drive designed for improved EMI performance, which helps to reduce electromagnetic interference.

The FS75R12KE3BOSA1 module is an ideal choice for applications requiring high power handling capabilities and fast switching. Its ability to handle both high voltage and current, combined with its integrated protection features and three-level gate drive, make this module a good choice for many applications such as electric drives, traction control and power control.

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