FS75R12W2T4B11BOMA1

Transistors - IGBTs - Modules

FS75R12W2T4B11BOMA1 is an insulated-gate bipolar transistor (IGBT) module that is typically used in high/low power switching applications such as AC motor drives, motor starters and inverters, welding, UPS systems, and high-power battery charging. The IGBT module is a semiconductor power device that is a combination of insulated-gate field effect transistors (IGFETs) and bipolar transistors, specifically the power switching functions of the IGFETs and the current conduction of the bipolar transistors. It is designed to be more efficient, reliable and faster than traditional devices, with increased levels of safety built in.

Application Field

The IGBT module FS75R12W2T4B11BOMA1 combines the power switching function of an IGFET with the current conduction of a bipolar transistor to provide a higher performance device. The module is usually used for high/low power switching applications such as AC motor drives, motor starters and inverters, welding, UPS systems, and high-power battery charging. Because of its efficiency and reliability, the IGBT module can also be used in a variety of environments, such as, but not limited to, variable speed drives, direct current (DC) powering, high speed telecommunications, and renewable energy. The FS75R12W2T4B11BOMA1 is a highly reliable and cost-effective IGBT module, which can be used in various applications.

Operating Principle

The IGBT switch controls the input current by effectively and efficiently controlling the switching elements. It is implemented by using a combination of an insulated gate field effect transistor (IGFET) and a bipolar power transistor. The insulated gate controls the conduction path of the IGFET, while the bipolar power transistor controls the current. When an external voltage is applied to the gate of the IGFET, it strongly bonds the electrons to create a conducting path and consequently a current is flowing through it.

The power transistor in the IGBT module acts as a switch. When the gate voltage of the IGFET is kept at zero or non-conducting level, the power transistor cuts off and isolates the current flow. When the gate voltage of the IGFET is increased above the threshold, the power transistor turns on, providing a conductive path for the current and allowing it to flow. This way, the IGBT module is able to control the current flow from the power source to the load.

Another benefit of the IGBT module is that it has a much better switching speed than other power semiconductor devices. This makes it an ideal choice for applications that require higher speeds for current switching, such as inverters and motor drives. Additionally, IGBT modules consume less power due to their low current losses.

The FS75R12W2T4B11BOMA1 is one of the most advanced and reliable IGBT modules available in the market. It is highly reliable and cost-effective, and offers excellent noise immunity, fast switching speed, and low power consumption. All these features, combined with its cost effectiveness, makes the FS75R12W2T4B11BOMA1 an excellent choice for a wide range of high/low power switching applications.