FS75R07N2E4BOSA1

Introduction

The FS75R07N2E4BOSA1 is an IGBT module designed for the reliable and efficient operation of any power system. The module is designed with a combination of advanced power semiconductor packaging, rugged gate drive technology, and low-on-resistance power MOSFETs.

It is designed for use in a variety of electrically driven applications, including power supplies, inverters, motor drivers and servo systems. In addition, it is also used in high-performance motor control applications, such as adjustable speed drives, high-power lighting, and mission-critical aerospace applications.

Application Field

The FS75R07N2E4BOSA1 is suitable for use in a wide range of applications where high-power operation is required. The excellent thermal performance and robust current handling of the module makes it suitable for high-power, high-frequency inverter circuits. The combination of high-current capability and low thermal resistance of the module allows efficient operation of complex motors and high-efficiency industrial machinery.

The combination of advanced packaging and low-on resistance makes it ideal for high-power audio amplifiers, high-power lighting and automotive lighting applications. In addition, the reliable and efficient operation of the module makes it suitable for mission-critical aerospace applications, such as hybrid and electric aircraft actuators, aircraft fuel pumps, and turbine engine systems.

Working Principle

The FS75R07N2E4BOSA1 is a combination of two individual IGBTs (insulated-gate bipolar transistors) connected in parallel. The IGBTs are connected to the load through a series connection of power MOSFETs. The IGBTs act as the main switch, and the MOSFETs act as the supporting switch. When current flows through the IGBTs, it is converted from AC to DC, which allows for efficient operation at higher currents.

The IGBTs of the module are protected from fault conditions such as over-currents and over-voltages by a unique fault protection circuit. The fault protection circuit can protect the IGBTs from damage by limiting the current or voltage to a safe level. In addition, the fault protection circuit can be programmed to shut down the system if a fault occurs.

The module also features an advanced gate-drive technology, which can provide precise control of the power semiconductor and reduce power dissipation. In addition, the gate drive system also includes a built-in current-limiting circuit, which can protect both the power device and the gate drive system.

Conclusion

The FS75R07N2E4BOSA1 IGBT module is an advanced power and motor control solution for high-power applications. It combines the advanced packaging of power semiconductors with the advanced gate-drive technology for precise control and efficient operation. The fault protection circuit and current-limiting circuit can protect the system from fault conditions and reduce power dissipation. In addition, the high-current and low thermal resistance of the module makes it suitable for operation in a wide range of applications.