FS75R12KE3GBOSA1

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FS75R12KE3GBOSA1 is a product within the range of IGBT power modules. IGBT Power Modules are based on insulated-gate bipolar transistors (IGBTs), which combine the advantages of both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and bipolar transistors. IGBTs are classed as Power Transistors and are widely used in large power conversion applications due to their performance characteristics, such as high frequency operation, high current, low forward voltage drop, low on-state resistance, fast switching, and low noise.The FS75R12KE3GBOSA1 is a 1200V/75A module and is designed to be used in a wide variety of mid- and high-power applications. It is suitable for high frequency DC/AC converters, industrial motor drive, UPS, solar inverters, renewable energy systems, traction, and other related applications.The FS75R12KE3GBOSA1 is designed with a proprietary anti-parallel cooling system that helps to reduce the module\'s temperature. This provides the device with excellent thermal robustness. Moreover, it is equipped with current sharing diodes for increased system efficiency and has built-in reverse diode for snubber applications.The module\'s main components include: an insulated-gate bipolar transistor (IGBT) with a fast gate drive circuit, a freewheeling and current sharing diode, a control logic and a gate drive output stage.The IGBT is the core component of the module and it is responsible for controlling the amount of current that passes through the load. The Gate Drive Circuit provides the IGBT with the necessary gate voltage level to turn it on and off, while the Freewheeling Diode and Current Sharing Diode ensure the current flow in the opposite direction and share the current passing through the load across all the devices in the module. The Control Logic provides the necessary protection against excessive temperature and current, while the Gate Drive Output Stage drives the IGBT and controls its switching on and off.The FS75R12KE3GBOSA1 is designed to operate at frequencies up to 19KHz. Its switching process is very fast - typically between 0.5µs and 8µs - and it has a minimum on-resistance of 0.95Ω at 25°C and a peak current of 75A. Moreover, it has a maximum operating temperature of 150°C and a maximum junction temperature of 175°C.The FS75R12KE3GBOSA1 is a reliable and robust IGBT power module which can provide users with a cost effective solution for mid- and high-power applications. It is easy to use and has superior performance characteristics which make it the perfect choice for various applications.

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