FS75R07W2E3B11ABOMA1

FS75R07W2E3B11ABOMA1 - Application Field and Working Principle

FS75R07W2E3B11ABOMA1 is an advanced Insulated Gate Bipolar Transistor (IGBT) module produced by FAIRCHILD, a world-leading semiconductor supplier. Due to its excellent switching performance and reliability, FS75R07W2E3B11ABOMA1 has become a popular choice for many applications. It is widely used in applications like power conversion, motor control, solar inverter, and renewable energy systems.

In general, an IGBT module is composed of several IGBT transistors stacked together to increase the current, power, and voltage ratings. FS75R07W2E3B11ABOMA1 is a three-in-one hybrid module composed of three insulated gate-biased transistors (IGBTs), which makes it suitable for those high power applications and makes the application solution more compact. The FS75R07W2E3B11ABOMA1 has a maximum Collector Emitter Voltage (Vce) of 1200 V and a maximum Collector current (Ic) of 75 A.

Working Principle of FS75R07W2E3B11ABOMA1

IGBTs are semiconductor devices that combine the properties of both bipolar transistors (BJTs) and field-effect transistors (MOSFETs). It is a three-terminal device, consisting of a source, gate, and drain terminal. Similar to a BJT, the gate of an IGBT is connected to a base terminal and the source is connected to the emitter. The IGBT works by having a voltage applied between the gate and the emitter, which modulates the current through the device.

The FS75R07W2E3B11ABOMA1 module has a zero-voltage turn-on and low gate-injection charge. In addition, it is equipped with N-type MOSFET with vertical current conduction and fast body diode with reverse recovery time. The insulated gate-bias bipolar transistor in FS75R07W2E3B11ABOMA1 module has a built-in snubber circuit, which increases its immunity to short circuit due to its low impedance.

Application Field of FS75R07W2E3B11ABOMA1

The FS75R07W2E3B11ABOMA1 module is suitable for high power industrial and renewable energy applications. It can be used for motor control, power conversion, automotive traction inverter, solar inverter, and other renewable energy systems. With its versatile features, FS75R07W2E3B11ABOMA1 is an ideal choice for those demanding applications. It also provides excellent switching performance and reliability due to its N-type MOSFET structure and low thermal resistance.

In addition, FS75R07W2E3B11ABOMA1 can be used in robotics, inverters, inverter welding, traction converters, high-frequency inverters, AC servo motors, battery-powered vehicles, AV components, and more. Its high voltage capability and low gate charge makes it ideal for motor drives and solar power conversion.

Conclusion

FS75R07W2E3B11ABOMA1 is an advanced IGBT module from FAIRCHILD. It has a maximum Collector Emitter Voltage (Vce) of 1200 V and a maximum Collector current (Ic) of 75 A. Its zero-voltage turn-on and low gate-injection charge makes it suitable for high power industrial and renewable energy applications. Its excellent switching performance and reliability make it an ideal choice for motor control, power conversion, automotive traction inverter, solar inverter, and other renewable energy systems.