GA05JT12-263

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The GA05JT12-263 is an advanced type of field-effect transistor specifically designed for use in automotive and industrial applications. It is a voltage-controlled Field-Effect Transistor (FET). While it may not be the most common type of FET, it features various advantages for specific applications, such as savings on board space, higher insulation requirements and improved heat-sinking. The GA05JT12-263 is suitable for use in a variety of digital and power switching applications, power management and other applications.

The GA05JT12-263 is a single-gate FET device manufactured from silicon, which offers several benefits over other types of transistors. Its size, low on-resistance, high drain current capability and wide range of operating temperatures make it ideal for space and cost constrained applications. Additionally, it offers excellent characteristics even at high temperatures, making it suitable for applications such as power encoding, which may require an inconstant operating temperature.

The working principle of the GA05JT12-263 can be best explained by looking at its internal structure. The FET contains three parts: the gate, the source, and the drain. The gate is the control element of the FET and is used to control the current flow between the source and the drain. An electrical charge on the gate influences the immediate vicinity of the gate and the underlying channel of the transistor. This, in turn, modulates the resistance between the source and the drain, allowing for a current to flow through the transistor.

When a positive electrical charge is applied to the gate, an electron channel forms between the source and the drain. This decreases resistance, allowing for current to flow through the channel. Conversely, when a negative electrical charge is applied to the gate, the channel between the source and the drain is disrupted, increasing resistance and cutting off the current. The large impedance between the source and the drain with no charge applied to the gate is why FETs are often referred to as ‘voltage-controlled’ transistors.

The GA05JT12-263 is generally used in industrial and automotive applications such as switched-mode power supplies, frequency converters and motor control, due to its low on-resistance and high drain current capabilities. Additionally, the FET can be pressed into service when switching up to 30-A loads, operating at up to +125 ºC. Its single-gate structure eliminates the need for additional components, which in turn reduces the cost of the application.

Overall, the GA05JT12-263 is an advanced single-gate FET that is designed for specific applications in automotive and industrial applications. It features a small size, high drain current capability, low on-resistance, and wide range of operating temperatures. The FET is used mostly for power management, motor control, and switched-mode power supplies, and is a great choice for applications that require cost savings, high insulation requirements, and improved heat-sinking.

The specific data is subject to PDF, and the above content is for reference