Allicdata Part #: | 1242-1165-ND |
Manufacturer Part#: |
GA06JT12-247 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | TRANS SJT 1200V 6A TO-247AB |
More Detail: | 1200V 6A (Tc) (90°C) Through Hole TO-247AB |
DataSheet: | GA06JT12-247 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) (90°C) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 6A |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AB |
Package / Case: | TO-247-3 |
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GA06JT12-247: Application Field and Working Principle
The GA06JT12-247 is an example of a single P-channel MOSFET which is widely used in a variety of applications due to its high performance and low cost. In this document, the operating principles and application fields of the GA06JT12-247 are discussed in detail.
Introduction to the GA06JT12-247
The GA06JT12-247 is a P-channel MOSFET (metal–oxide–semiconductor field-effect transistor) manufactured by Texas Instruments. It is a P-channel enhancement mode MOSFET which means that it requires a positive gate-source voltage to turn on and operate. The device consists of a source, a gate, and a drain (SGD) and is available in a TO-220FP package size, with the dimensions of 6.6 mm x 7.2 mm x 5.9 mm. The operating temperature ranges from -55°C to 175°C, while the breakdown voltage between the drain and the source is rated at 30 volts.
Operating Principles of the GA06JT12-247
The operation of the GA06JT12-247 is based on the principle of a field-effect transistor (FET). The device utilizes the capacitance between the source and the gate to control the current flow between the drain and the source. When the gate voltage increases, the capacitance between the gate and the source increases, which increases the effective width of the conducting channel between the drain and the source. This allows more current to flow between the drain and the source, which causes the device to switch on and operate. Conversely, decreasing the gate voltage reduces the capacitance between the gate and the source, which decreases the width of the conducting channel and reduces the current flow between the drain and the source, causing the device to switch off.
Application Fields of the GA06JT12-247
The GA06JT12-247 is suitable for a wide variety of applications due to its high performance and low cost. It is used in power management circuits, signal amplifiers, and switching applications. The P-Channel MOSFET feature makes it suitable for applications that require precise control of the voltage or current. It is also used in a variety of consumer electronics, such as computers, audio systems, and mobile phones.
Conclusion
In conclusion, the GA06JT12-247 is a single P-channel MOSFET which is suitable for a wide range of applications due to its high performance and low cost. It is based on the operating principle of a FET, in which the capacitance between the gate and the source is used to control current flow between the drain and the source. Applications of the GA06JT12-247 include power management circuits, signal amplifiers, switching applications, and consumer electronics, such as computers, audio systems, and mobile phones.
The specific data is subject to PDF, and the above content is for reference
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