Allicdata Part #: | 1242-1135-ND |
Manufacturer Part#: |
GA08JT17-247 |
Price: | $ 39.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | TRANS SJT 1700V 8A TO-247AB |
More Detail: | 1700V 8A (Tc) (90°C) 48W (Tc) Through Hole TO-247A... |
DataSheet: | GA08JT17-247 Datasheet/PDF |
Quantity: | 669 |
1 +: | $ 36.24390 |
10 +: | $ 34.11450 |
30 +: | $ 31.98220 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | -- |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1700V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) (90°C) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 8A |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | 48W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AB |
Package / Case: | TO-247-3 |
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GA08JT17-247 represents a part of single field-effect transistor. It is mainly used in electric circuits and devices for the purpose of amplification and switching, for example, digital circuits, analog circuits and radio frequency circuits. To better understand the properties and applications of the GA08JT17-247, an overview of its field and working principle should be given.
Field of Application of GA08JT17-247
The GA08JT17-247 is a field-effect transistor suitable for many different applications. It is mainly used as a digital switch, driving relay, controlling the current in circuit, controlling the level of voltage, driving motor and advancing power amplifier. Additionally, its features make it suitable for use in more complicated applications, such as integrated circuit amplifier, fast switching switching circuit and enhancement mode amplifier.
Working Principle of GA08JT17-247
The GA08JT17-247 is a field-effect transistor that consists of a single gate, which is a metal-oxide-semiconductor (MOS) device. Its structure is composed of a source and a drain, which are formed by N-type semiconductor material and its substrate is a P-type semiconductor material. The gate is insulated from the channel of the source and drain by a thin oxide layer, which serves as a control terminal. The channel isn’t connected to voltage and current, however, when a voltage is applied to the gate, it creates a localized field effect in the area between the source and drain, which allows the flow of current.
The way the current flows depends on the type of field-effect transistor. In the case of the GA08JT17-247, it is a single field-effect transistor and it acts as a switch device. Essentially, when the gate voltage applied to the gate is low, it leads to the channel being open, meaning that current can flow from the source to the drain. When the gate voltage is high, it reverses the channel and current stops flowing. This phenomenon is known as the enhancement or depletion mode, where the transistor either allows current to flow or blocks it.
Conclusion
In summary, the GA08JT17-247 is a single field-effect transistor that can be used for many different applications. Its gate, which is insulated from the channel, creates a localized electric field when a voltage is applied, which allows the flow of current. This flow is either enhanced through a low gate voltage or blocked with a high gate voltage, making it a suitable device for digital switching, driving relay, controlling the current in circuit, controlling the level of voltage, driving motor and advancement power amplifier.
The specific data is subject to PDF, and the above content is for reference
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