Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	8Mb (1M x 8)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	50µs, 3ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-XFDFN Exposed Pad
Supplier Device Package:	8-USON (2x3)

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GD25VQ80CEIGR Memory - Application Field and Working Principle

Introduction

GD25VQ80CEIGR is a high-capacity, non-volatile DRAM memory module designed to meet the demands of high-performance systems. With 8 Gigabyte (GB) capacity, this device is suitable for embedded applications such as high-end networking, storage, and mobile devices. This article looks at the application field of GD25VQ80CEIGR memory and its working principle.

Application Fields

GD25VQ80CEIGR memory offers a high density and low power consumption, making it ideal for high-resolution image capture, medical imaging, and other demanding tasks. It is also suitable for tasks that require high data throughput, such as large databases and high speed networks. In addition, it is suited for applications in the automotive, aerospace, and industrial sectors.The GD25VQ80CEIGR\'s dual-channel design enables improved data throughput, which can improve system performance. It is also highly reliable, making it an ideal choice for demanding applications that require accuracy and precision.

Working Principle

GD25VQ80CEIGR memory operates on the principle of a non-volatile dual-inline memory module (NVDIMM). This type of memory is composed of four components: a volatile memory module, a non-volatile memory, a controller, and a secondary power source.The volatile memory module is the main source of memory, storing data in dynamic RAM as fast as the processor needs it. The non-volatile memory module stores the contents of the DRAM upon power loss and recalls them in the event of power loss. The controller is responsible for controlling the read and write speeds and the power management of the memory module. Finally, the secondary power source is responsible for providing the power necessary for the non-volatile memory module when the main power source is not available.

Conclusion

GD25VQ80CEIGR memory is a reliable and high-density memory module that is suitable for a range of embedded applications. Its dual-channel design and low power consumption make it a great choice for demanding tasks. It operates on the principle of a non-volatile dual-inline memory module, with four essential components that are responsible for the overall performance of the module.

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