GD25LE64CLIGR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	64Mb (8M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	2.4ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	1.65 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount

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GD25LE64CLIGR Memory Application Field and Working Principle

Memory is an essential component of every computer system. Without it, the basic functions of a computer system would be rendered meaningless. As such, memory manufacturers have made significant strides in developing increasingly more advanced types of memory that are capable of meeting the needs of increasingly sophisticated mobile and other computing devices. The GD25LE64CLIGR is the latest in a long line of memory offerings. By examining its application field and working principle, we can gain a better understanding of how this memory can benefit us today.

Application Field

The GD25LE64CLIGR is a specialized type of non-volatile memory. This means it stores data even when a device is powered off. This type of memory is most often found in mobile devices like smartphones and tablets, as well as in embedded systems. It is typically used when a device needs longer-term storage capacity that cannot be easily replaced.The GD25LE64CLIGR is designer for embedded and mobile applications. It is designed to offer a reliable, high-density storage solution that is also energy-efficient. The memory is offered in a variety of densities, ranging from 8 MB up to 160 MB depending on the specific needs of an application.

Working Principle

The GD25LE64CLIGR non-volatile memory is comprised of two distinct layers: the internal memory array and the controller. The memory array is a collection of integrated circuits (ICs) that store data on an onboard array of capacitors. Each memory cell is comprised of a single capacitor and a single transistor. When a bit is stored, electrons are added to the capacitor, which in turn creates a voltage potential. The transistor allows the charge to be read and written to the memory cell.The controller is the second layer of the GD25LE64CLIGR and is responsible for protocols and algorithms related to data storage and retrieval. It is responsible for controlling the flow of data between the memory chip and the host device. It also features an enercy management system that is designed to keep power consumption to a minimum.

Conclusion

The GD25LE64CLIGR is an advanced type of non-volatile memory that is specifically designed for mobile and embedded applications. It is capable of storing up to 160 MB of data and can provide reliable, energy-efficient storage. It is comprised of two layers – an array of memory cells and a controller – that allow it to provide a powerful and efficient data storage solution.

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