Allicdata Part #: | GD25VQ80CSIGR-ND |
Manufacturer Part#: |
GD25VQ80CSIGR |
Price: | $ 0.29 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | GigaDevice Semiconductor (HK) Limited |
Short Description: | NOR FLASH |
More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8) SPI - Quad I/O ... |
DataSheet: | GD25VQ80CSIGR Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.25821 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 8Mb (1M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 50µs, 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
Supplier Device Package: | 8-SOP |
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GD25VQ80CSIGR is a type of memory device and is used in different applications due to its reliable and fast nature.
It belongs to the family of NOR memories and is a Single-Chip 8G/4G-bit (x8) NOR Flash memory with 3V voltage support. It is designed using a Floating Gate technology with a 2.7V–3.6V operating voltage solution and hence can serve the best-in-class performance required in any field.
The GD25VQ80CSIGR memory device has a VCC Operating Range of up to 3.6V, Aperature to Block size of 1.5MB, page size of 256 bytes, and an endurance of 100K cycles. It is packaged in a TSOP-48 Type I Flat Package that includes an 8 bytes address and 8 bit data. It is used in many different applications such as automotive, mobile, audio, PC systems, medical equipment, microwave ovens, servers, controllers and more.
The GD25VQ80CSIGR memory device is known for its fast programming time and higher endurance time. It performs faster than an embedded DRAM in read mode but slower than an embedded DRAM in write mode. It also has better power management and consumes lesser amount of energy compared to a DRAM.
The working principle of the GD25VQ80CSIGR memory device is based on the following steps.
Write Cycle:
- In the first step, the address and data locations to be written to the memory device are selected.
- Then, the internal circuitry activates the write enable latch and turns on the Write Enable (WEN) pin.
- The input data to be written is shifted through the input register.
- The data is then stored in the memory locations specified by the address.
- Finally, the write process is completed by deactivating the write enable latch and turning off the WEN pin.
Read Cycle:
- In the first step, the address and data locations to be read from the memory device are selected.
- Then, the internal circuitry activates the read enable latch and turns on the Read Enable (REN) pin.
- The data stored in the memory location specified by the address is shifted out from the output register.
- The output data is then available at the pins.
- Finally, the read process is completed by deactivating the read enable latch and turning off the REN pin.
Thus, the GD25VQ80CSIGR memory device helps in providing better data storage solutions across multiple application fields. It is used in many electronic devices where reliable and efficient data storage is required.
The specific data is subject to PDF, and the above content is for reference
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