GD25LQ20CTIGR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	2Mb (256K x 8)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	50µs, 2.4ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	1.65 V ~ 2.1 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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GD25LQ20CTIGR Memory

The GD25LQ20CTIGR Memory is one of the latest advances in memory technology and is becoming increasingly popular in a variety of applications. It is a highly versatile non-volatile memory solution that provides fast random access capabilities coupled with superior performance and reliability. This review will examine the various features of the GD25LQ20CTIGR Memory and its applications, along with a discussion of its working principle.

GD25LQ20CTIGR Features

The GD25LQ20CTIGR boasts a range of impressive features. It has a maximum write speed of 15Mb/s, a maximum read speed of 20Mb/s and a low power consumption of 120mW. The GD25LQ20CTIGR can store up to 200,000 4K-Bit pages, a maximum single-byte capacity of 32Mb, and an operating voltage range of 2.7V to 3.6V. With a wide temperature range of -40°C to 85°C, the GD25LQ20CTIGR can operate in a variety of challenging environmental conditions.The GD25LQ20CTIGR also features several proprietary features that enhance its performance and reliability. These features include error detection and correction (EDC), internal ECC, read cyclic redundancy check (CRC), write synchronization, and temperature monitoring and alarm. Furthermore, the GD25LQ20CTIGR has an integrated 2048-bit Unique ID (UID), which allows for additional protection of the stored data.

GD25LQ20CTIGR Applications

As a result of its versatility, the GD25LQ20CTIGR is well suited for a variety of applications. It is commonly used in consumer electronics such as smartphones, cameras, and handheld gaming devices. It is also used in automotive electronics, including engine control modules, diagnostics systems, and parking assistants. Additionally, the GD25LQ20CTIGR can be deployed in industrial automation, medical, and aerospace applications.

GD25LQ20CTIGR Working Principle

The GD25LQ20CTIGR consists of four channels of NAND Flash memory, which each contain an embedded SRAM buffer. The SRAM buffer is used to store and process data, and its size is determined by the block size of the NAND channel.The GD25LQ20CTIGR can be operated in one of two modes – sequential and random access. In sequential access mode, data is written and read sequentially, regardless of their position on the memory chip. This allows for faster throughput speeds. In random access mode, the system can select any data on the chip, allowing data to be read and written in any order.To protect the data stored in the GD25LQ20CTIGR, the device incorporates several security features. Data encryption and authentication is provided via a secure serial interface, while a Power Burn-In Mode is used to check the integrity and reliability of the data stored on the chip. An onboard UID can also be used for unique identification of the chip and for authentication purposes.

Conclusion

The GD25LQ20CTIGR Memory is an excellent choice for a variety of devices requiring fast random access, superior performance, and reliability. With features such as EDC, internal ECC, Power Burn-In and UID, the GD25LQ20CTIGR provides reliable and secure data storage. Furthermore, its low power consumption and wide temperature range make it well-suited for use in automotive, industrial, medical and aerospace applications.

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