GD25LQ64CQIGR

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The GD25LQ64CQIGR memory is a 3.3 Volt, 64 Mbit CMOS (Complementary Metal Oxide Semiconductor) Non-Volatile Serial Flash memory. Built with robust blocking write protection, 4K byte sector protection, and a block erase feature, the GD25LQ64CQIGR offers the convenience of a serial interface and is designed to support applications requiring fast read access. The memory operates on 1.8V to 3.6V supply, and with its broad industrial temperature range of –40 °C to +85 °C, the GD25LQ64CQIGR is ideal for applications in various environments.

Common applications for the GD25LQ64CQIGR memory include executing code programs like BIOS for desktop, notebook, and embedded server PCs, as well as storing software for digital instrumentation and electronic devices. The GD25LQ64CQIGR is also used for data storage in applications like industrial automation, medical imaging, automotive automotive infotainment, digital signage, and appliance control.

Working Principle

The GD25LQ64CQIGR is designed to provide higher performance serial NOR flash memory access. The memory is organized into eight blocks of eight kilobytes each. These blocks can be protected, enabling management of important data blocks. Each block has its own block erase command and status register, providing a shorter write cycle time.

The GD25LQ64CQIGR memory provides a single instruction register which is used to determine the action of the device. The instruction register supports a variety of instructions such as chip erase, read, write and program. In addition to the instructions, the GD25LQ64CQIGR also supports a variety of status registers which allow the user to determine the status of the memory device.

The GD25LQ64CQIGR memory provides a number of serial I/O formats including the popular high-speed Quad-SPI. This serial format is ideal for applications that require high speed access to on-chip memory. The GD25LQ64CQIGR memory supports the single, dual, quad, and octal I/O formats, enabling access to the memory at different speeds depending on the device and application. The serial I/O formats also provide the ability to support a variety of device operations such as page programming, page read, sequential programming, and sequential read.

The GD25LQ64CQIGR supports write protection which allows the user to protect a portion of the memory array. Each block is protected independently and can be used to segregate different types of data or code. In addition, each sector can be protected independently using the sector protect feature.

In addition to its robust blocking write protection, 4K byte sector protection and block erase features, the GD25LQ64CQIGR also includes an on-chip ECC for error correction control. The on-chip ECC provides an additional level of data integrity and offers improved system performance.

In conclusion, the GD25LQ64CQIGR memory is ideal for applications requiring fast read access and reliable data storage. Its robust blocking write protection, 4K byte sector protection, block erase, and on-chip ECC make it the perfect choice for all types of embedded applications.

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