GD25LQ32DNIGR Allicdata Electronics

GD25LQ32DNIGR Integrated Circuits (ICs)

Allicdata Part #:

1970-1053-2-ND

Manufacturer Part#:

GD25LQ32DNIGR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8) SPI - Quad I/O...
DataSheet: GD25LQ32DNIGR datasheetGD25LQ32DNIGR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Clock Frequency: 120MHz
Write Cycle Time - Word, Page: 2.4ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.65 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The GD25LQ32DNIGR is a 3V non-volatile memory device with a slim wafer package that is designed to transfer and store data. It has an excellent 32Mbits low-voltage-input NOR Flash memory that can be used for various applications including automotive systems and industrial control. This device features multiple technologies for operation, data retention and improved write speed.

The GD25LQ32DNIGR device features two basic modes of operation: parallel mode and serial mode. In the parallel mode, data is written,programmed and erased on eight bits at once, while the serial mode is used for reading, writing, programming and erasing one bit at a time. This enables the user to access the memory quickly, while minimizing the need to write the entire memory each time.

The GD25LQ32DNIGR device has excellent data retention capability and supports a wide temperature range of -40°C to +125°C. It also supports hot-swap, a technology which enables the device to operate at near zero power during standby. Furthermore, the device is error-correcting code (ECC) and error-detecting code (EDC) enabled to enhance data integrity.

The device supports various memory commands composed of a three-byte instruction including READ, FAST_READ, WRITE, ERASE, WRITE_LOCK, READ_LOCK, SUSPEND_PROGRAM, RESUME_PROGRAM, PATTERN_READ, CFI_READ, with additional command functions for system performance. Moreover, the device also comes with eight memory banks with page size from 512 bytes to 4096 bytes.

The operating voltage for the GD25LQ32DNIGR device is between 2.4V and 3.9V, and its program time is average 4 µs of word programming. This is especially useful in applications where a low-power, high-speed memory solution is needed. Furthermore, the device also supports a variety of tests, including the interface test, timing test, ECC logic test, concurrency test, and function test.

The GD25LQ32DNIGR device is specifically designed for memory applications such as industrial control, automotive systems, smart meters and consumer electronic devices. In industrial control, the GD25LQ32DNIGR device can be used to transfer, store and record data for devices such as robots and controllers. In automotive systems, the device is useful in controlling airbags, powertrain systems and engine monitoring systems. For consumer electronics, the GD25LQ32DNIGR device is an ideal choice for non-volatile storage of large data sets in products such as digital cameras, MP3 players and satellite systems.

The GD25LQ32DNIGR is a 3V non-volatile memory device with excellent data retention and excellent write speed. It is useful in a wide range of applications such as industrial control, automotive systems and consumer electronics. The device supports multiple technologies for operation, data retention and improved write speed, as well as a variety of tests for system performance. The device has an operating voltage of 2.4V to 3.9V and is programmed in an average 4 µs of word programming.

The specific data is subject to PDF, and the above content is for reference

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