GD25LQ40CTIGR Allicdata Electronics
Allicdata Part #:

1970-1019-1-ND

Manufacturer Part#:

GD25LQ40CTIGR

Price: $ 0.43
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8) SPI - Quad I/...
DataSheet: GD25LQ40CTIGR datasheetGD25LQ40CTIGR Datasheet/PDF
Quantity: 1000
1 +: $ 0.39690
10 +: $ 0.36162
25 +: $ 0.35683
50 +: $ 0.35482
100 +: $ 0.31727
250 +: $ 0.31455
500 +: $ 0.30996
750 +: $ 0.30519
1000 +: $ 0.29878
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.65 V ~ 2.1 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The GD25LQ40CTIGR is a NOR Flash memory chip used in portable applications. It is a 4-megabit (512 Kbyte) Serial NOR Flash memory,available in 8-pin SOIC, 8-ball USON or 8-pin WSON packages. It provides a high-bandwidth SPI-compatible (Serial Peripheral Interface) for high-speed access to memory data. The GD25LQ40CTIGR is designed to meet the needs of portable and low power applications in a variety of end-products such as digital cameras, PDAs and industrial automation and control.

The GD25LQ40CTIGR is ideal for low power applications as it offers a low active current of 1.5mA at 1.8V and a reduced active current of 0.2mA at 1.2V, making it energy efficient. It also offers a fast data transfer rate of up to 66 MHz in SPI quad mode. This allows for the reading and writing of data quickly and easily.

Furthermore, the GD25LQ40CTIGR utilizes Advanced Sector Protection (ASP) technology that provides extra layers of data protection. ASP technology increases reliability and improves system security. ASP enables the individual sector or block erase protection, so that protected sectors are protected from erasure or reprogramming. This added security helps protect data against unauthorized access.

In addition to its reliability and security features, the GD25LQ40CTIGR is also notable for its low power requirements. It operates from a single supply voltage ranging from 1.7V to 3.6V, and features a sleep mode current of 0.3μA at 1.8V, allowing for a significant reduction in power consumption. It is also extremely small, measuring only 8-pin SOIC or 8-ball USON and 8-pin WSON packages.

The GD25LQ40CTIGR also features advanced write protection capability and non-volatile status register (NVSRA). The write-protect feature restricts write/erase access to specific areas of memory, preventing unintentional overwrites and corrupt data. The advanced write-protect feature provides stronger protection than the traditional write-protect feature. The NVSRA enables the system to keep a record of the status of the GD25LQ40CTIGR, implying the write protection and command configuration information.

Overall, the GD25LQ40CTIGR provides an ideal solution for applications that require energy-efficient, secure and reliable non-volatile memory. It offers fast access times and low power consumption while providing additional layers of data protection with its Advanced Sector Protection technology. It also features advanced write-protect capability and the Non-Volatile Status Register, making it a highly reliable and secure memory solution.

The specific data is subject to PDF, and the above content is for reference

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