GD25LQ80CEIGR Integrated Circuits (ICs)

Memory: GD25LQ80CEIGR Application Field and Working Principle

GD25LQ80CEIGR is a dynamic random access memory (DRAM) chip produced by GigaDevice. It is a high-performance and low-power 8 megabyte (MB) storage solution, providing advanced features such as multiple burst lengths, an internal 1.8V core, and 3.3V I/O interface support. Specifically, the GD25LQ80CEIGR enables the design of small form factor products that require large amounts of storage, such as digital media players, tablet PCs, digital information appliances, consumer devices, and gaming products.

The GD25LQ80CEIGR is pin and electrically compatible with the industry-standard 32-pin Fast Cycle DDR SDRAM (1x8, 2x8, 1x16, and 2x16 configurations). This allows users to easily migrate their designs to GigaDevice’s latest DRAM products. The GD25LQ80CEIGR offers high speed PC rating, fast access times of 4K and 2K cycles, and a high level of system integration. The device is capable of asynchronous read/write operations and can deliver a peak bandwidth of up to 400 MB/s.

The GD25LQ80CEIGR provides for a high level of system integration that simplifies the design and reduces the power consumption of the system. The device operates with a single 1.8V power supply, allowing for low power consumption during active and idle periods. The internal 1.6V analog core also helps to minimize power consumption. The device requires no external reference clock, enabling small-form-factor designs and eliminating any additional board interconnect.

The GD25LQ80CEIGR is a Q-OROM version of the standard GD25LQ80CEIGR that allows for greater utilization of clock speed. The device also on-chip ECC protection that provides error correction when accessing data stored in the device. With its advanced set of features, the GD25LQ80CEIGR is an ideal application solution for consumer-driven applications that require increased system performance at lower power.

Working Principle of GD25LQ80CEIGR

The working principle of GD25LQ80CEIGR is based on a chaining structure, using a combination of a latch-based architecture and a multiplexer-based organization. The latch-based architecture is composed of two registers, one for storing data and the other used as an address buffer. The multiplexer-based architecture is composed of two cascading multiplexers for selecting the data and the address buffer. The multiplexer can select either the data or the address buffer, depending on which is the desired data for the current cycle.

In order to execute the DRAM operation, two clock pulses are used. The first clock pulse is used to latch the address into the address buffer and activate the multiplexer. The address is then sent through the multiplexer to the memory array. The second clock pulse is used to enable the address latch and send the data to the input or output port through the multiplexer.

In addition to the two clock pulses, the GD25LQ80CEIGR also requires several control signals to enable the DRAM to execute the requested operation. These signals include Row Address Strobe (RAS), Column Address Strobe (CAS), Write Enable (WE), Refresh Enable (RE), and Data In/Data Out (DII/DIO).

When the GD25LQ80CEIGR receives the RAS and CAS signals it will execute the requested operation. If the address and data match, then the accessed data is returned to the output port. If the requested data is not in the memory array, then the necessary data is retrieved from the refresh circuit. Once the data has been refreshed, it is then written back to the memory array, and the requested operation is completed.

The GD25LQ80CEIGR provides a fast, reliable, and low-power DRAM solution that is suited for applications that require storage of a large amount of data. With its easy-to-implement features, the GD25LQ80CEIGR is an ideal solution for consumer products, digital information appliances, and gaming applications.