GD25Q20CEIGR Allicdata Electronics

GD25Q20CEIGR Integrated Circuits (ICs)

Allicdata Part #:

1970-1005-2-ND

Manufacturer Part#:

GD25Q20CEIGR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 2Mb (256K x 8) SPI - Quad I/...
DataSheet: GD25Q20CEIGR datasheetGD25Q20CEIGR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Clock Frequency: 120MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GD25Q20CEIGR is a 20Mbit NAND flash memory chip. It has an advanced 2-bit-per-cell floating gate technology and supports up to 66MHz for fast clock operations. The integrated memory controller provides a fast interface to the device and is compatible with the SPI/QPI serial interface standards. It is ideal for embedded industrial applications where fast read cycles and reliable data storage are important.

Application Field

GD25Q20CEIGR is mostly used in embedded industrial applications where fast read cycles and reliable data storage are important. It is suitable for a wide range of applications including system boot, digital video recorder (DVR) systems, portable medical systems and RFID tags. It can also be used in embedded systems and consumer applications such as networking, pharmaceutical, automotive, and aviation.

Working Principle

The working principle of GD25Q20CEIGR is based on NAND flash memory which is made up of cells that hold basic bits of data. Each cell consists of a floating gate transistor and control gate. When a voltage is applied to the control gate, electrons are attracted towards the channel. When the channel is filled with electrons, the cell is considered to be in the “off” state. This process is known as programming. To erase the cell, the electrons must be removed from the channel, leaving the cell in the “on” state.

Reading the data stored in these cells involves determining the charge stored in the channel and then interpreting that as a one or a zero. This is achieved by applying a voltage to the control gate and monitoring the output. When the charge stored in the channel is above a certain threshold, the output will be a 1 and when it is below, the output will be a 0. The charge stored in the channel is constantly monitored and adjusted to maintain a minimum level.

GD25Q20CEIGR also has an advanced 2-bit-per-cell technology that enables it to store two bits in each cell. This technology further increases the storage capacity of each device and makes it even more suitable for applications where large amounts of data need to be stored and read quickly.

Conclusion

GD25Q20CEIGR is an advanced and reliable NAND flash memory chip with a fast interface and high speeds for quick data reads. It is ideal for embedded industrial applications where fast read cycles and reliable data storage are important. With its 2-bit-per-cell technology, the device can store and read more data in a faster and efficient manner than other memory chips.

The specific data is subject to PDF, and the above content is for reference

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