GD25Q64CSJG

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The GD25Q64CSJG memory device is a 32 Mbit nonvolatile memory device (NVM) made by Winbond Electronics. It is based on a novel Embedded Flash technology that combines a large single-supply Flash memory array with a low-power embedded SRAM (static random access memory). This technology has been architected to provide an ultra-low-power solution in embedded applications that require the combination of a large Flash memory and SRAM in a single device.

The GD25Q64CSJG features a 32 Megabit non-volatile Flash memory array based on Winbond\'s high density Embedded Flash technology. The device utilizes a single supply (3.0V to 3.6V) to power the device, providing a cost effective solution. The high density memory array supports full program/erase functionality and a variety of serial interface solutions, including an eight-bit multiple I/O SPI host interface, an eight-initial I/O SPI bus master interface and an eight-initial I/O Quad SPI bus master interface. The device also supports block protection for both SPI and QSPI operations for reliable device operation.

The GD25Q64CSJG also features an embedded SRAM (static random access memory) array that is integrated onto the same die as the Flash memory array. The SRAM boasts a high speed operation (640 kbps data transfer rate) and uses a low power single supply. It has a simple to use bus protocol and is available with a variety of memory configurations. This combination of features makes the GD25Q64CSJG suitable for a wide range of embedded applications.

The GD25Q64CSJG is a proven device with an extensive track record in Design Wins. It has been successfully used in a range of embedded applications from consumer products to industrial and medical applications. The device\'s low power consumption and wide operating range make it suitable for a range of battery powered portable devices, such as handheld GPS receivers, smart phone systems, display and lighting device, medical and agricultural control systems.

The GD25Q64CSJG is based on advanced embedded flash memory technology and a robust power management architecture. The device supports a wide operating temperature range from -40 to +85°C, making it suitable for a wide range of industrial and automotive applications. The GD25Q64CSJG offers advanced features including enhanced write/erase protection, on-chip ECC (error correction code) and power savings features.

The GD25Q64CSJG features two separate array control logic architectures, an array control circuit (ACC) and a program/erase controller (PEC). The ACC is responsible for controlling the Flash array and controlling the program/erase operations. The PEC is responsible for managing the write/erase/suspend processes of the Flash memory. At the same time, it provides data integrity and power management of the device.

The GD25Q64CSJG is a 32 Mbit nonvolatile memory device (NVM) combining a large single-supply Flash memory array with a low-power embedded SRAM. It is suitable for a wide range of embedded applications requiring reliable operation, low power consumption, and wide operating temperature range. It features two array control logic architectures, an array control circuit and a program/erase controller, and is based on advanced embedded flash memory technology and a robust power management architecture.

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