GD25VE40CSIGR Allicdata Electronics
Allicdata Part #:

GD25VE40CSIGR-ND

Manufacturer Part#:

GD25VE40CSIGR

Price: $ 0.27
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8) SPI - Quad I/...
DataSheet: GD25VE40CSIGR datasheetGD25VE40CSIGR Datasheet/PDF
Quantity: 1000
10000 +: $ 0.24745
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.1 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GD25VE40CSIGR is a type of nonvolatile memory, which stands for four-line SPI bus interface NOR flash memory, a type of memory technology. It was designed primarily to provide rapid and reliable data access, useful for applications requiring data level reliability and portability.

This type of memory can be found in many applications, such as embedded systems, automotive, consumer electronics, industrial applications, and medical devices. In particular, the GD25VE40CSIGR is designed for use in high-end automotive, consumer, and industrial applications, which require high speed and reliability. This type of memory can be used in applications such as digital recording, aviation, automotive, military/aerospace, and industrial controllers.

The GD25VE40CSIGR is based on a double-transistor memory cell, which ensures low power consumption, better speed, and improved endurance. The device is specifically designed for flash memory that needs to support high-speed transfers. It offers a range of features including built-in error correction and a secure erase security option.

The GD25VE40CSIGR works by storing the data in memory cells, which are then organized into sectors. In order to access the memory, an address may be given to the memory controller, which then converts it into a sector address. Once the sector address is known, the controller is then able to read or write to the sector, depending on the user\'s command.

Once the data is accessed, it is then applied to a memory array and stored in registers. When writing data, the registers are loaded with the data to be written and then sent back to the memory array, where it is then stored in the specified location. When reading data, the memory controller is responsible for reading the requested data from the memory array.

The most commonly used feature of the GD25VE40CSIGR is its endurance, which is the number of times data can be written to and erased from the device without errors. This attribute is important because components such as memory circuits and memory cells can be susceptible to errors over time. To ensure data integrity and reliability, the GD25VE40CSIGR has a built-in error detection and correction algorithm, which corrects errors when detected.

In conclusion, the GD25VE40CSIGR is a type of nonvolatile memory, which is specifically designed for applications requiring data level reliability and portability. This type of memory offers a range of features that make it ideal for use in high-end automotive, consumer, and industrial applications, and it has a built-in error detection and correction algorithm for improved reliability and data integrity. The device also features low power consumption, better speed, and improved endurance, making it a great choice for applications such as digital recording, aviation, automotive, military/aerospace, and industrial controllers.

The specific data is subject to PDF, and the above content is for reference

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