GD25VQ40CTIG

GD25VQ40CTIG is a 2 Gbit (256M X 8) flash NAND memory device designed for use with the high-speed Quad-SPI interface. It is available in the 48-pin TSOP and 54-ball Fine-Pitch BGA packages, and features standard serial-peripheral-interface (SPI) and Quad-SPI (QSPI) pins, allowing for simple and cost-effective integration into systems requiring high-speed serial data transfers.This device is manufactured using 3D vertical NAND Flash process technology with 8V-70V cell voltage for reliable writes. GD25VQ40CTIG offers high read performance, with up to 50MHz clock frequency when reading data in Dual-Quad I/O mode, and up to 104MHz clock frequency when reading data in Quad I/O or Dual I/O modes. This device also supports an industry-standard single-power-supply voltage and small-footprint packages, making it ideal for consumer and embedded applications.

GD25VQ40CTIG Application Field

GD25VQ40CTIG is designed for consumer applications in automotive and consumer products, such as smart phones, tablets, digital cameras, GPS applications, and other digital consumer products. It is also suitable for use in industrial and military applications including aerospace, industrial automation, medical, and consumer electronics.The GD25VQ40CTIG offers advanced features such as high-speed Quad-SPI interface, 8V-70V cell voltage, and standard single-power-supply voltage to make it suitable for low-power embedded systems. It is also a cost-effective solution for automotive, consumer, and industrial applications that require high-speed and high-capacity serial data transfers.GD25VQ40CTIG also provides high endurance and extended temperature range, which makes it suitable for harshest environments, and offers a broad and reliable range of densities for quad-SPI Flash memory applications.

GD25VQ40CTIG Working Principle

The GD25VQ40CTIG device is based on 3D vertical NAND Flash process technology, allowing for 8V-70V cell voltage for reliable writes. The GD25VQ40CTIG device contains 16 NAND Flash chips arranged in a 4-by-4 array, with each NAND Flash chip containing 13,300 pages. Each NAND Flash chip has 6 I/O lines and is organized as a 16K-page 256Mb = 32MB block size. The device has a doubly-die design with two pages per block (1K+1K) which eliminates ECC and wear-leveling operations when writing to the device; thus increasing write performance by reducing the steps required to write data.The GD25VQ40CTIG supports the standard serial-peripheral-interface (SPI) and Quad-SPI (QSPI) pins, enabling high speed serial data transfers. When reading in Quad-I/O mode, it supports up to 104MHz clock frequency and 50MHz clock frequency when reading in Dual-Quad I/O mode. The GD25VQ40CTIG device is also designed for extended temperature ranges, supporting an extended temperature range of -40°C to +85°C. Additionally, it supports 50,000 Program/Erase cycle endurance and has a very low power standby current of 0.01uA.

Conclusion

GD25VQ40CTIG is a 2Gbit (256M X 8) flash NAND memory device, which is designed for consumer applications in automotive and consumer products, as well as industrial, military, and aerospace applications. It is based on 3D vertical NAND Flash process technology and offers advanced features like high-speed Quad-SPI interface, 8V-70V cell voltage and single-power-supply voltage, making it suitable for low-power embedded systems. In addition, it supports high read performance, extended temperature range, and up to 50,000 Program/Erase cycles endurance.