GD25VQ80CTIGR Integrated Circuits (ICs)

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GD25VQ80CTIGR is a type of memory semiconductor and can be found in a variety of applications. It is an 8M-bit serial NOR Flash memory that stores data and code in an organically constructed array of 8-bit microcontrollers. This type of memory has the ability to store and retrieve data quickly and efficiently and is used in many embedded systems and industrial applications.

GD25VQ80CTIGR features a wide operating voltage range of 2.5V to 3.6V, making it suitable for low power applications. It is designed to be used in temperature ranges from -40°C to +85°C and is resistant to shock, vibration and ESD. The device is available in small 8-lead packages such as SOIC, WSON8 and SOP8 for easy mounting on circuit boards.

One of the primary uses for GD25VQ80CTIGR is in the field of embedded systems. It is used in many consumer electronic and industrial applications such as automotive, instrumentation and medical devices. This device is also used in industrial motor controls, home automation systems, satellite navigation systems and digital video recorders.

The working principle of GD25VQ80CTIGR is based on non-volatile flash technology. The flash cell consists of a polysilicon gate and floating gate MOS-MOSFET pair. When the chip is initially powered on, the polysilicon gate is charged and the floating gate is discharged. When data is written to the chip, the polysilicon gate is discharged, allowing electrons to tunnel through the oxide dielectric of the floating gate. These electrons get stored in the floating gate and create a stored electrical charge. To read the data stored in the flash cell, the polysilicon gate is recharged and the stored electrical charge causes a voltage drop which can be measured to read the data.

GD25VQ80CTIGR is a highly efficient and reliable memory device used in a variety of applications. It is low power, versatile and offers a wide operating voltage range. Its flexibility makes it suitable for use in embedded systems and industrial applications. Its working principle is based on non-volatile flash technology with a flash cell consisting of a polysilicon gate and floating gate MOS-MOSFET pair.

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