GDZ30B-E3-08 Allicdata Electronics
Allicdata Part #:

GDZ30B-E3-08-ND

Manufacturer Part#:

GDZ30B-E3-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 30V 200MW SOD323
More Detail: Zener Diode 30V 200mW ±4% Surface Mount SOD-323
DataSheet: GDZ30B-E3-08 datasheetGDZ30B-E3-08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 30V
Tolerance: ±4%
Power - Max: 200mW
Impedance (Max) (Zzt): 200 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 23V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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A Zener diode, by comparison, is an electrical component with a single junction, which, when connected in a circuit in the forward direction, permits the flow of electrons in the same direction, but presents an almost infinite resistance to current flowing in the opposite direction. The GDZ30B-E3-08 Diode is specifically developed for current zener applications. This model can be widely used in regulated power supplies, voltage regulation, wave protection and other special voltage regulation and protection circuits.

Working Principle of the GDZ30B-E3-08 Diode

The function of a Zener diode is governed by a number of factors, but the most important of these is its breakdown voltage - the point at which the diode allows current to flow in the reverse direction in the same way as a normal diode. When this happens, the diode becomes an efficient voltage regulator because the voltage across it remains very nearly constant as the current flowing through it varies. The GDZ30B-E3-08 has a breakdown voltage of 8.2V.

This breakdown voltage is determined both by the structure of the junction and the doping levels used in the manufacturing process. When a reverse voltage is applied to a Zener diode greater than the Zener breakdown voltage, the junction between the two zones in the diode (the p-type and n-type layers) is characterized by an avalanche breakdown, which causes a large number of electrons and holes to recombine in the junction. This provides the mechanism for regulating the voltage across the diode as current is made to flow through it.

Application Fields of the GDZ30B-E3-08 Diode

As already discussed, the GDZ30B-E3-08 Diode is specifically developed for current zener applications. Its application fields include:

1. Regulated Power Supplies:This type of diode is widely used in regulated power supplies. In this application, it can be used to provide a small amount of current or to provide additional stabilizing elements to the power supply.

2. Voltage Regulation:The diode can also be used to regulate voltage, by ensuring that the output voltage remains at the set level regardless of the input voltage level changes.

3. Wave Protection:The diode can also be used for wave protection, as it is able to rectify undesirable waveforms in circuits, such as those caused by high frequency noises and electromagnetic interference.

4. Other Special Voltage Regulation and Protection Circuits:The diode can also be used for a variety of other special voltage regulation and protection circuits, such as those found in automotive and computing applications.

Conclusion

The GDZ30B-E3-08 Diode is a specialized Zener diode, designed for current zener applications. It is widely used in regulated power supplies, voltage regulation, wave protection and other special voltage regulation and protection circuits. Uniquely, this particular type of diode offers a breakdown voltage of 8.2V, and has been designed for superior performance and stability.

The specific data is subject to PDF, and the above content is for reference

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