Allicdata Part #: | 1560-1055-5-ND |
Manufacturer Part#: |
GHIS030A120S-A1 |
Price: | $ 20.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | IGBT BOOST CHOP 1200V 60A SOT227 |
More Detail: | IGBT Module Trench Field Stop Single 1200V 60A Ch... |
DataSheet: | GHIS030A120S-A1 Datasheet/PDF |
Quantity: | 7 |
1 +: | $ 18.57240 |
10 +: | $ 17.17950 |
25 +: | $ 15.78650 |
100 +: | $ 14.67220 |
250 +: | $ 13.46500 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 60A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 30A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 4nF @ 30V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
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The GHIS030A120S-A1 is a type of Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric Corporation for use in power control applications. The GHIS030A120S-A1 is a three-phase gate-controlled module that contains six IGBTs for each phase, providing high power handling and switching versatility. This module is suitable for both unipolar and bipolar applications, and can be operated at frequencies up to 1 MHz. It is particularly suitable for applications in motor control, in light power converters and in appliances.
The GHIS030A120S-A1 provides easy to use simple and safe gate driving circuitry and integrated protection functions. It is designed with integrated anti-misoperation functions and low turn-on loss capability. With built-in diodes, the GHIS030A120S-A1 can take high currents without external commutation diodes. It incorporates advanced technologies, such as built-in overcurrent protection and temperature feedback, allowing operation up to 600V.
The GHIS030A120S-A1’s operating principle is based on the IGBT structure. An IGBT is a type of semiconductor device which consists of an insulated gate bipolar transistor, which combines the features of a bipolar transistor and an insulated gate field effect transistor. It has a higher switching frequency than a bipolar transistor and can be used to quickly switch high power. The IGBT also has a lower drain--source loss than a typical MOSFET, making it an ideal solution for power control applications. The GHIS030A120S-A1 is able to act as a solid-state switch, allowing it to be used in a wide range of power control applications.
The GHIS030A120S-A1 is designed to provide high-power performance, improved efficiency and reliability. Its increased power rating, flexible wiring and turn-on times, and other features make it a versatile option for use in a variety of power control applications. Its integrated temperature sensing capabilities, low turn-on loss, along with advanced protection features make it an excellent choice for the most demanding applications.
The GHIS030A120S-A1 is a high-performance IGBT module that is suitable for a wide range of power control applications. Its advanced features make it one of the most reliable and powerful IGBT modules available on the market today. Its high power rating and fast switching capabilities mean it is capable of handling a variety of power sources, while its integrated temperature sensing capabilities, low turn-on loss, and advanced protection features make it an excellent choice for powering demanding applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GHIS100A120S2B1 | Global Power... | 134.92 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS100A120T2P2 | Global Power... | 138.28 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS200A120S3B1 | Global Power... | 248.53 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS100A120T2C1 | Global Power... | 358.75 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
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GHIS030A120S-A1 | Global Power... | 20.43 $ | 7 | IGBT BOOST CHOP 1200V 60A... |
GHIS060A060S-A1 | Global Power... | 25.93 $ | 25 | IGBT BOOST CHOP 600V 120A... |
GHIS040A120S-A2 | Global Power... | 28.11 $ | 35 | IGBT BUCK CHOP 1200V 80A ... |
GHIS040A120S-A1 | Global Power... | 29.18 $ | 25 | IGBT BOOST CHOP 1200V 80A... |
GHIS080A060S-A1 | Global Power... | 30.12 $ | 21 | IGBT BOOST CHOP 600V 160A... |
GHIS080A060S-A2 | Global Power... | 30.12 $ | 20 | IGBT BUCK CHOP 600V 160A ... |
GHIS060A120S-A1 | Global Power... | 30.24 $ | 25 | IGBT BOOST CHP 1200V 120A... |
GHIS080A120S-A1 | Global Power... | 37.63 $ | 28 | IGBT BOOST CHP 1200V 160A... |
GHIS030A120S-A2 | Global Power... | 18.92 $ | 15 | IGBT BUCK CHOP 1200V 60A ... |
GHIS040A060S-A2 | Global Power... | 19.74 $ | 18 | IGBT BUCK CHOP 600V 80A S... |
GHIS060A060S-A2 | Global Power... | 25.93 $ | 17 | IGBT BUCK CHOP 600V 120A ... |
GHIS060A120S-A2 | Global Power... | 30.24 $ | 9 | IGBT BUCK CHOP 1200V 120A... |
GHIS080A120S-A2 | Global Power... | 37.63 $ | 23 | IGBT BUCK CHOP 1200V 160A... |
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GHIS060A120S1-E1 | Global Power... | 26.18 $ | 1000 | SI IGBT/ SIC SBD HYBRID M... |
GHIS020A060B1P2 | Global Power... | 32.1 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS030A060B1P2 | Global Power... | 35.0 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS030A060B2P2 | Global Power... | 36.36 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS080A120S1-E1 | Global Power... | 38.13 $ | 1000 | SI IGBT/ SIC SBD HYBRID M... |
GHIS050A060B3P2 | Global Power... | 50.44 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS100A120S1-E1 | Global Power... | 54.95 $ | 1000 | SI IGBT/ SIC SBD HYBRID M... |
GHIS025A120T1P2 | Global Power... | 65.05 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS050A120T1P2 | Global Power... | 81.5 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
GHIS075A120T2P2 | Global Power... | 115.33 $ | 1000 | SI IGBT & SIC SBD HYBRID ... |
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