GHIS080A120S-A2 Allicdata Electronics
Allicdata Part #:

1560-1134-5-ND

Manufacturer Part#:

GHIS080A120S-A2

Price: $ 37.63
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: IGBT BUCK CHOP 1200V 160A SOT227
More Detail: IGBT Module Trench Field Stop Single 1200V 160A 48...
DataSheet: GHIS080A120S-A2 datasheetGHIS080A120S-A2 Datasheet/PDF
Quantity: 23
1 +: $ 34.20900
10 +: $ 32.19550
Stock 23Can Ship Immediately
$ 37.63
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 160A
Power - Max: 480W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 10.3nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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The GHIS080A120S-A2 is part of the Infineon IGBT Modules line of high-power switching devices that provide both voltage and current control for a range of power applications.These devices offer high temperature operation and are ideal for use in applications such as motor control, UPS, switched-mode power supplies, and drive applications.

The GHIS080A120S-A2 is a contemporary IGBT module composed of an insulated gate bipolar transistor (IGBT), as well as pulse transformer, current sensor, LTCC (low temperature co-fired ceramic) substrate, and other supporting components.

This module utilizes the N-channel IGBT to effectively control the switch junction between low-voltage and high-voltage circuits. This enables the device to rapidly switch hundreds of amperes of current between the collector and emitter.

The integrated pulse transformer in the GHIS080A120S-A2 module provides a galvanic isolation between the control device and the switch. This is beneficial as it reduces stress placed on the gate controlling IGBT and allows the module to safely manage heavy-load current in applications.

The low temperature co-fired ceramic (LTCC) substrate featured in the GHIS080A120S-A2 consists of a thin layer of ceramic material with a metallic conductor layer deposited on the surface. This reduces the size of the module and simplifies the printed circuit board (PCB) routing.

The GHIS080A120S-A2 module also includes an integrated current sensor that allows the detection of over-current signals when the module is carrying a large current load. This feature helps protect the device from damage or destruction due to over current flows.

The device can be used in a variety of medium to high-power application fields, such as motor control, uninterruptible power supplies (UPS), switched-mode power supplies, and drive applications. The benefits of using the GHIS080A120S-A2 module in these applications include its high current rating, extended temperature range, and its low on-state voltage.

In summary, the GHIS080A120S-A2 module from the Infineon IGBT Modules line is a reliable and efficient high-power switching device. This device allows for the control of high current between two voltage sources and provides protection through an integrated current sensor and galvanic isolation. These features make the module ideal for use in a variety of medium to high-power applications.

The specific data is subject to PDF, and the above content is for reference

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