| Allicdata Part #: | 1560-1059-5-ND |
| Manufacturer Part#: |
GHIS060A120S-A1 |
| Price: | $ 30.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Global Power Technologies Group |
| Short Description: | IGBT BOOST CHP 1200V 120A SOT227 |
| More Detail: | IGBT Module Trench Field Stop Single 1200V 120A 68... |
| DataSheet: |  GHIS060A120S-A1 Datasheet/PDF |
| Quantity: | 25 |
| 1 +: | $ 27.49320 |
| 10 +: | $ 25.71090 |
| 25 +: | $ 23.77870 |
| 100 +: | $ 22.29260 |
| 250 +: | $ 20.80640 |
Specifications
| Mounting Type: | Chassis Mount |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227 |
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Single |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 120A |
| Power - Max: | 680W |
| Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 60A |
| Current - Collector Cutoff (Max): | 2mA |
| Input Capacitance (Cies) @ Vce: | 8nF @ 30V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Description
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GHIS060A120S-A1 is a kind of Insulated Gate Bipolar Transistor (IGBT) module which is widely used in various types of industrial applications. It features an innovative IGBT power switch design, small size, and high-density packaging, making it suitable for a variety of industrial applications, such as welding and soldering, motor control, power switching, and power conversion.In this way, GHIS060A120S-A1 can be viewed as a two-in-one device, combining both MOSFET and bipolar transistor technology. This type of device is typically used in power applications, as it offers very fast switching speeds, high electrical efficiency and improved overall power savings.This device has a maximum working voltage of 600 volts and a maximum current capacity of 120 amperes. It can be operated at high frequencies, up to 50kHz, making it suitable for use in high-density power switching applications.The working principle of this device is fairly straightforward. The module consists of two parts - an IGBT power switch and a base. The IGBT power switch is formed by two large MOSFET transistors connected internally in an anti-parallel configuration. This enables it to operate as an on/off switch, enabling the power to be switched on or off.The base of the device is activated when the on/off switch is changed to the "on" position. This activates the electrodes of the IGBT power switch, allowing the power to be switched on. The two MOSFETs then help dissipate the excess heat generated during the switching operation. This increases the power efficiency of the device and prolongs its life.Using the GHIS060A120S-A1, users can achieve higher levels of performance while reducing both space and power requirements. This device is capable of high-frequency and high-efficiency operations, making it suitable for a wide range of industrial applications. It is also quite robust and offers good reliability, making it a popular choice in industrial settings.In conclusion, GHIS060A120S-A1is a versatile IGBT module for a wide variety of industrial applications. It is easy to install and can handle large currents, making it ideal for power conversion and motor control applications. With its rugged construction and high electrical efficiency, it is well-suited for any demanding industrial environment.
The specific data is subject to PDF, and the above content is for reference
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