GHIS080A120S-A1

Transistors - IGBTs - Modules: GHIS080A120S-A1 Application Field and Working Principle

The GHIS080A120S-A1 is an integrated gate bipolar transistor (IGBT) module developed by Mitsubishi. It is designed to efficiently control and manage high power systems. As a compact and integrated device, the GHIS080A120S-A1 combines numerous low-level transistor switches and other peripherals into a single package.

As an IGBT, the GHIS080A120S-A1 is known for its high speed switching, low power losses, and high voltage ratings. In terms of its application fields, it is commonly used in motor drives, uninterruptible power supply (UPS) systems, servo amplifiers, welding machines, and adjustable speed drives (ASDs).

Basic Working Principles of GHIS080A120S-A1

The GHIS080A120S-A1 operates based on the principles of an interlinked circuit of bipolar transistor and gate oxide films. This integrated module can be configured to enable either n-channel power switches (NPS) or p-channel power switches (PPS) depending on the specific application.

The IGCT achieves a homogeneous switching frequency distribution upon the on and off switching of the transistor. Due to its merits such as low losses, high efficiency, and high voltage rating, the GHIS080A120S-A1 is widely implemented in high power systems.

Moreover, compared to other IGBT modules, it provides higher durability, stronger thermal resistance, and more reliable services. All these properties lead to a product particularly good for applications with stringent reliability requirements.

Functional Characteristics of GHIS080A120S-A1

The GHIS080A120S-A1 has a wide range of customizable characteristics to suit a large number of applications. For example, it offers working temperatures of -20℃ to +75℃, a rated voltage of 1800V, and current ratings of 0.8A to 120A. The wide available range of IGBT modules provides a flexible combination to accommodate a variety of applications.

In addition, this product offers low voltage stimuli of ±15V between gate and emitter with a maximum 200kHz operating frequency. Moreover, with an operating temperature of 35℃ up to 110℃ and an insulation voltage rating of 2500Vrms, it can be used in a number of harsh environment conditions.

The GHIS080A120S-A1 also comes with several efficient Gate drive protect function for reliable operation. The overcurrent protection enhances internal short circuit protection and over-voltage protection capabilities of the module. The module also features a current limiting alert and a power-down mode.

Conclusion

The GHIS080A120S-A1 from Mitsubishi is a reliable and efficient IGBT module. It offers high speed switching, low power losses, and high voltage ratings for various power application needs. This module is available in different configurations with adjustable characteristics and a wide range of current ratings. In addition, the GHIS080A120S-A1 also incorporates several useful safety and protection functions that are suitable for many tough environment applications.